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IRF7700PBF PDF预览

IRF7700PBF

更新时间: 2024-11-09 13:00:27
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 157K
描述
Power Field-Effect Transistor, 8.6A I(D), 20V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, LEAD FREE, TSSOP-8

IRF7700PBF 数据手册

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PD - 93894A  
IRF7700  
HEXFET® Power MOSFET  
l Ultra Low On-Resistance  
l P-Channel MOSFET  
l Very Small SOIC Package  
l Low Profile (< 1.1mm)  
l Available in Tape & Reel  
VDSS  
-20V  
RDS(on) max  
0.015@VGS = -4.5V  
0.024@VGS = -2.5V  
ID  
-8.6A  
-7.3A  
Description  
HEXFET® power MOSFETs from International Rectifier  
utilize advanced processing techniques to achieve ex-  
tremely low on-resistance per silicon area. This benefit,  
combined with the ruggedized device design , that Inter-  
national Rectifier is well known for, provides the de-  
signer with an extremely efficient and reliable device  
for use in battery and load management.  
1
2
3
4
8
7
6
5
D
S
G
1 =  
D
S
S
8 =  
7 =  
6 =  
5 =  
D
S
S
2 =  
3 =  
4 =  
G
D
TSSOP-8  
The TSSOP-8 package, has 45% less footprint area than  
the standard SO-8. This makes the TSSOP-8 an ideal  
device for applications where printed circuit board space  
is at a premium.  
The low profile (<1.1mm) of the TSSOP-8 will allow it to fit  
easily into extremely thin application environments such  
as portable electronics and PCMCIA cards.  
Absolute Maximum Ratings  
Parameter  
Drain- Source Voltage  
Max.  
-20  
Units  
V
VDS  
ID @ TC = 25°C  
ID @ TC = 70°C  
IDM  
Continuous Drain Current, VGS @ -4.5V  
Continuous Drain Current, VGS @ -4.5V  
Pulsed Drain Current   
±8.6  
±6.8  
±68  
1.5  
A
PD @TC = 25°C  
PD @TC = 70°C  
Power Dissipation  
W
Power Dissipation  
0.96  
0.01  
± 12  
Linear Derating Factor  
W/°C  
V
VGS  
Gate-to-Source Voltage  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
°C  
Thermal Resistance  
Parameter  
Maximum Junction-to-Ambientƒ  
Max.  
83  
Units  
°C/W  
RθJA  
www.irf.com  
1
6/19/00  

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