IRF7700PBF

更新时间： 2024-11-27 13:00:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	157K
描述
Power Field-Effect Transistor, 8.6A I(D), 20V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, LEAD FREE, TSSOP-8

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IRF7700PBF 数据手册

PD - 93894A

IRF7700

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l P-Channel MOSFET

l Very Small SOIC Package

l Low Profile (< 1.1mm)

l Available in Tape & Reel

V_DSS

-20V

R_DS(on)max

0.015@V_GS= -4.5V

0.024@V_GS= -2.5V

I_D

-8.6A

-7.3A

Description

HEXFET^®power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design , that Inter-

national Rectifier is well known for, provides the de-

signer with an extremely efficient and reliable device

for use in battery and load management.

1 =

8 =

7 =

6 =

5 =

2 =

3 =

4 =

TSSOP-8

The TSSOP-8 package, has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space

is at a premium.

The low profile (<1.1mm) of the TSSOP-8 will allow it to fit

easily into extremely thin application environments such

as portable electronics and PCMCIA cards.

Absolute Maximum Ratings

Parameter

Drain- Source Voltage

Max.

-20

Units

V_DS

I_D@ T_C= 25°C

I_D@ T_C= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

±8.6

±6.8

±68

1.5

P_D@T_C= 25°C

P_D@T_C= 70°C

Power Dissipation

0.96

0.01

± 12

Linear Derating Factor

W/°C

V_GS

Gate-to-Source Voltage

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Max.

Units

°C/W

R_θJA

www.irf.com

6/19/00

12 3 4 5 6 7...9

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