是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.69 |
Is Samacsys: | N | 峰值回流温度(摄氏度): | NOT SPECIFIED |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRF7606TRPBF | INFINEON |
类似代替 |
暂无描述 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF7606TR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 3.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Met | |
IRF7606TRHR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 3.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Met | |
IRF7606TRPBF | INFINEON |
获取价格 |
暂无描述 | |
IRF7607 | INFINEON |
获取价格 |
Power MOSFET(Vdss=20V, Rds(on)=0.030ohm) | |
IRF7607PBF | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRF7607TR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Met | |
IRF7607TRHR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Met | |
IRF7607TRPBF | INFINEON |
获取价格 |
Trench Technology | |
IRF7663 | INFINEON |
获取价格 |
Power MOSFET(Vdss=-20V, Rds(on)=0.020ohm) | |
IRF7663PBF | INFINEON |
获取价格 |
Trench Technology, Ultra Low On-Resistance, P-Channel MOSFET |