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IRF7606PBF PDF预览

IRF7606PBF

更新时间: 2024-11-24 04:44:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
7页 184K
描述
HEXFET Power MOSFET

IRF7606PBF 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.69
Is Samacsys:N峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

IRF7606PBF 数据手册

 浏览型号IRF7606PBF的Datasheet PDF文件第2页浏览型号IRF7606PBF的Datasheet PDF文件第3页浏览型号IRF7606PBF的Datasheet PDF文件第4页浏览型号IRF7606PBF的Datasheet PDF文件第5页浏览型号IRF7606PBF的Datasheet PDF文件第6页浏览型号IRF7606PBF的Datasheet PDF文件第7页 
PD - 95245  
IRF7606PbF  
HEXFET® Power MOSFET  
l Generation V Technology  
l Ultra Low On-Resistance  
l P-Channel MOSFET  
l Very Small SOIC Package  
l Low Profile (<1.1mm)  
l Available in Tape & Reel  
l Fast Switching  
A
D
1
2
3
4
8
S
S
VDSS = -30V  
7
D
6
S
G
D
5
D
RDS(on) = 0.09Ω  
l Lead-Free  
Description  
Top View  
Fifth GenerationHEXFETsfromInternationalRectifier  
utilize advanced processing techniques to achieve  
extremely low on-resistance per silicon area. This  
benefit, combined with the fast switching speed and  
ruggedized device design that HEXFET Power  
MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use  
in a wide variety of applications.  
The new Micro8 package, with half the footprint area  
of the standard SO-8, provides the smallest footprint  
available in an SOIC outline. This makes the Micro8  
an ideal device for applications where printed circuit  
boardspaceisatapremium. Thelowprofile(<1.1mm)  
of the Micro8 will allow it to fit easily into extremely thin  
application environments such as portable electronics  
and PCMCIA cards.  
Micro8  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
Drain-Source Voltage  
-30  
V
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ -10V  
Continuous Drain Current, VGS @ -10V  
Pulsed Drain Current  
-3.6  
-2.9  
A
-29  
PD @TA = 25°C  
PD @TA = 70°C  
Maximum Power Dissipation„  
Maximum Power Dissipation „  
Linear Derating Factor  
1.8  
W
W
1.1  
14  
mW/°C  
V
VGS  
Gate-to-Source Voltage  
± 20  
VGSM  
dv/dt  
Gate-to-Source Voltage Single Pulse tp<10µS  
Peak Diode Recovery dv/dt ‚  
Junction and Storage Temperature Range  
Soldering Temperature, for 10 seconds  
30  
-5.0  
V
V/ns  
°C  
TJ , TSTG  
-55 to + 150  
240 (1.6mm from case)  
Thermal Resistance  
Parameter  
Maximum Junction-to-Ambient „  
Max.  
70  
Units  
°C/W  
RθJA  
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective  
only for product marked with Date Code 505 or later .  
www.irf.com  
1
5/13/04  

IRF7606PBF 替代型号

型号 品牌 替代类型 描述 数据表
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