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IRF7606TRPBF PDF预览

IRF7606TRPBF

更新时间: 2024-11-06 13:08:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
8页 104K
描述
暂无描述

IRF7606TRPBF 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMALL OUTLINE, S-PDSO-G8Reach Compliance Code:compliant
Factory Lead Time:15 weeks风险等级:0.88
Is Samacsys:N其他特性:LOGIC LEVEL COMPATIBLE
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):3.6 A最大漏源导通电阻:0.09 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:S-PDSO-G8
湿度敏感等级:1元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):29 A
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF7606TRPBF 数据手册

 浏览型号IRF7606TRPBF的Datasheet PDF文件第2页浏览型号IRF7606TRPBF的Datasheet PDF文件第3页浏览型号IRF7606TRPBF的Datasheet PDF文件第4页浏览型号IRF7606TRPBF的Datasheet PDF文件第5页浏览型号IRF7606TRPBF的Datasheet PDF文件第6页浏览型号IRF7606TRPBF的Datasheet PDF文件第7页 
PD - 9.1264C  
IRF7606  
HEXFET® Power MOSFET  
l Generation V Technology  
l Ultra Low On-Resistance  
l P-Channel MOSFET  
l Very Small SOIC Package  
l Low Profile (<1.1mm)  
l Available in Tape & Reel  
l Fast Switching  
A
1
2
8
S
S
D
D
VDSS = -30V  
7
6
5
3
4
S
D
D
G
R
DS(on) = 0.09Ω  
Top View  
Description  
Fifth Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve  
extremely low on-resistance per silicon area. This benefit,  
combined with the fast switching speed and ruggedized  
device design that HEXFET Power MOSFETs are well  
knownfor, providesthedesignerwithanextremelyefficient  
and reliable device for use in a wide variety of applications.  
The new Micro8 package, with half the footprint area of the  
standard SO-8, provides the smallest footprint available in  
an SOIC outline. This makes the Micro8 an ideal device for  
applications where printed circuit board space is at a  
premium. The low profile (<1.1mm) of the Micro8 will allow  
it to fit easily into extremely thin application environments  
such as portable electronics and PCMCIA cards.  
MICRO8  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ -10V  
Continuous Drain Current, VGS @ -10V  
Pulsed Drain Current   
-3.6  
-2.9  
A
-19  
PD @TA = 25°C  
Power Dissipation  
1.8  
W
mW/°C  
V
Linear Derating Factor  
14  
VGS  
Gate-to-Source Voltage  
± 20  
dv/dt  
TJ,TSTG  
Peak Diode Recovery dv/dt ‚  
Junction and Storage Temperature Range  
-5.0  
V/ns  
°C  
-55 to + 150  
Thermal Resistance Ratings  
Parameter  
Typ.  
Max.  
Units  
RθJA  
Maximum Junction-to-Ambient„  
–––  
70  
°C/W  
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective  
only for product marked with Date Code 505 or later .  
8/25/97  

IRF7606TRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF7606PBF INFINEON

类似代替

HEXFET Power MOSFET
IRF7606TR INFINEON

功能相似

Power Field-Effect Transistor, 3.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Met

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