是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, S-PDSO-G8 | Reach Compliance Code: | compliant |
Factory Lead Time: | 15 weeks | 风险等级: | 0.88 |
Is Samacsys: | N | 其他特性: | LOGIC LEVEL COMPATIBLE |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 3.6 A | 最大漏源导通电阻: | 0.09 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | S-PDSO-G8 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | SQUARE |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 29 A |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRF7606PBF | INFINEON |
类似代替 |
HEXFET Power MOSFET | |
IRF7606TR | INFINEON |
功能相似 |
Power Field-Effect Transistor, 3.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Met |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF7607 | INFINEON |
获取价格 |
Power MOSFET(Vdss=20V, Rds(on)=0.030ohm) | |
IRF7607PBF | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRF7607TR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Met | |
IRF7607TRHR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Met | |
IRF7607TRPBF | INFINEON |
获取价格 |
Trench Technology | |
IRF7663 | INFINEON |
获取价格 |
Power MOSFET(Vdss=-20V, Rds(on)=0.020ohm) | |
IRF7663PBF | INFINEON |
获取价格 |
Trench Technology, Ultra Low On-Resistance, P-Channel MOSFET | |
IRF7663TRPBF | INFINEON |
获取价格 |
MOSFET P-CH 20V 8.2A MICRO8 | |
IRF7665S2PBF | INFINEON |
获取价格 |
Key parameters optimized for Class-D audio amplifier applications | |
IRF7665S2PBF_15 | INFINEON |
获取价格 |
Can deliver up to 100W per channel into 8 with no heatsink |