Datasheet > IRF7606TRHR

IRF7606TRHR

更新时间： 2024-11-24 20:52:19

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲光电二极管晶体管
页数	文件大小	规格书
8页	102K
描述
Power Field-Effect Transistor, 3.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8, SOIC-8

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IRF7606TRHR 数据手册

PD - 9.1264C

IRF7606

HEXFET^®Power MOSFET

l Generation V Technology

l Ultra Low On-Resistance

l P-Channel MOSFET

l Very Small SOIC Package

l Low Profile (<1.1mm)

l Available in Tape & Reel

l Fast Switching

V_DSS= -30V

_DS(on)= 0.09Ω

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Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

knownfor, providesthedesignerwithanextremelyefficient

and reliable device for use in a wide variety of applications.

The new Micro8 package, with half the footprint area of the

standard SO-8, provides the smallest footprint available in

an SOIC outline. This makes the Micro8 an ideal device for

applications where printed circuit board space is at a

premium. The low profile (<1.1mm) of the Micro8 will allow

it to fit easily into extremely thin application environments

such as portable electronics and PCMCIA cards.

MICRO8

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-3.6

-2.9

-19

P_D@T_A= 25°C

Power Dissipation

1.8

mW/°C

Linear Derating Factor

V_GS

Gate-to-Source Voltage

± 20

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

-5.0

V/ns

°C

-55 to + 150

Thermal Resistance Ratings

Parameter

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

–––

°C/W

All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective

only for product marked with Date Code 505 or later .

8/25/97

12 3 4 5 6 7 8

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