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IRF7604TRPBF

更新时间： 2024-11-24 12:59:15

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
8页	136K
描述
Power Field-Effect Transistor, 3.6A I(D), 20V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8

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IRF7604TRPBF 数据手册

PD - 9.1263E

IRF7604

HEXFET^®Power MOSFET

l Generation V Technology

l Ultra Low On-Resistance

l P-Channel MOSFET

l Very Small SOIC Package

l Low Profile (<1.1mm)

l Available in Tape & Reel

l Fast Switching

V_DSS= -20V

R_DS(on)= 0.09Ω

Top View

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The new Micro8 package, with half the footprint area of the

standard SO-8, provides the smallest footprint available in

an SOIC outline. This makes the Micro8 an ideal device for

applications where printed circuit board space is at a

premium. The low profile (<1.1mm) of the Micro8 will allow

it to fit easily into extremely thin application environments

such as portable electronics and PCMCIA cards.

M icro8

Absolute Maximum Ratings

Parameter

Max.

-3.6

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

-2.9

-19

P_D@T_A= 25°C

Power Dissipation

1.8

mW/°C

Linear Derating Factor

V_GS

Gate-to-Source Voltage

± 12

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

-5.0

V/ns

°C

-55 to + 150

Thermal Resistance

Parameter

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

–––

°C/W

All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective

only for product marked with Date Code 505 or later .

12/9/97

12 3 4 5 6 7 8

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