IRF7555

更新时间： 2024-11-05 22:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	73K
描述
Power MOSFET(Vdss=-20V, Rds(on)=0.055ohm)

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IRF7555 数据手册

PD-91865B

IRF7555

HEXFET^®Power MOSFET

●

Trench Technology

Ultra Low On-Resistance

Dual P-Channel MOSFET

Very Small SOIC Package

Low Profile (<1.1mm)

G 1

V_DSS= -20V

G 2

Available in Tape & Reel

R_DS(on)= 0.055Ω

Top View

Description

New trench HEXFET power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design that HEXFET

Power MOSFETs are well known for, provides the designer

withanextremelyefficientandreliabledeviceforuseinawide

varietyofapplications.

The new Micro8 package has half the footprint area of the

standard SO-8. This makes the Micro8 an ideal package for

applicationswhereprintedcircuitboardspaceisatapremium.

Thelowprofile(<1.1mm)oftheMicro8willallowittofiteasily

intoextremelythinapplicationenvironmentssuchasportable

electronics and PCMCIA cards.

Micro8

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-Source Voltage

-20

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

-4.3

-3.4

-34

P_D@T_A= 25°C

P_D@T_A= 70°C

Maximum Power Dissipation

Linear Derating Factor

1.25

0.8

mW/°C

V_GS

Gate-to-Source Voltage

± 12

E_AS

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Soldering Temperature, for 10 seconds

1.1

dv/dt

T_J, T_STG

V/ns

°C

-55 to + 150

240 (1.6mm from case)

Thermal Resistance

Parameter

Max.

Units

R_θJA

Maximum Junction-to-Ambient

100

°C/W

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2/2/00

12 3 4 5 6 7

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