IRF7526D1

更新时间： 2024-09-15 22:11:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体肖特基二极管晶体管功率场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
8页	123K
描述
FETKY⑩ MOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V)

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IRF7526D1 数据手册

PD-91649C

IRF7526D1

FETKY MOSFET & Schottky Diode

l Co-packaged HEXFET Power

MOSFET and Schottky Diode

l P-Channel HEXFET

V_DSS= -30V

R_DS(on)= 0.20Ω

Schottky Vf = 0.39V

l Low V_FSchottky Rectifier

l Generation 5 Technology

l Micro8 Footprint

Top View

Description

The FETKY^TMfamily of co-packaged HEXFETs and Schottky diodes offer the

designer an innovative board space saving solution for switching regulator

applications. Generation 5 HEXFETs utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area. Combining this technology

with International Rectifier's low forward drop Schottky rectifiers results in an

extremely efficient device suitable for use in a wide variety of portable electronics

applications like cell phone, PDA, etc.

ThenewMicro8^TMpackage, withhalfthefootprintareaofthestandardSO-8, provides

the smallest footprint available in an SOIC outline. This makes the Micro8^TMan ideal

device for applications where printed circuit board space is at a premium. The low

profile (<1.1mm) of the Micro8^TMwill allow it to fit easily into extremely thin application

environments such as portable electronics and PCMCIA cards.

Micro8^TM

Absolute Maximum Ratings

Parameter

Maximum

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

-2.0

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current ➀

-1.6

-16

P_D@T_A= 25°C

P_D@T_A= 70°C

1.25

Power Dissipation

0.8

Linear Derating Factor

mW/°C

V_GS

Gate-to-Source Voltage

± 20

dv/dt

Peak Diode Recovery dv/dt ➁

Junction and Storage Temperature Range

-5.0

V/ns

°C

T_J,T_STG

-55 to +150

Thermal Resistance Ratings

Parameter

Maximum

Units

R_θJA

Junction-to-Ambient ➃

100

°C/W

Notes:

Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)

I_SD≤ -1.2A, di/dt ≤ 160A/µs, V_DD≤ V_(BR)DSS, T_J≤ 150°C

Pulse width ≤ 300µs – duty cycle ≤ 2%

When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance

www.irf.com

5/7/99

12 3 4 5 6 7 8

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