PD-91649C
IRF7526D1
TM
FETKY MOSFET & Schottky Diode
l Co-packaged HEXFET Power
MOSFET and Schottky Diode
l P-Channel HEXFET
1
8
K
K
A
VDSS = -30V
RDS(on) = 0.20Ω
Schottky Vf = 0.39V
2
7
A
3
4
6
5
l Low VF Schottky Rectifier
l Generation 5 Technology
S
D
D
G
TM
l Micro8 Footprint
Top View
Description
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
ThenewMicro8TM package, withhalfthefootprintareaofthestandardSO-8, provides
the smallest footprint available in an SOIC outline. This makes the Micro8TM an ideal
device for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
Micro8TM
Absolute Maximum Ratings
Parameter
Maximum
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
-2.0
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current ➀
-1.6
-16
A
PD @TA = 25°C
PD @TA = 70°C
1.25
W
Power Dissipation
0.8
Linear Derating Factor
10
mW/°C
V
VGS
Gate-to-Source Voltage
± 20
dv/dt
Peak Diode Recovery dv/dt ➁
Junction and Storage Temperature Range
-5.0
V/ns
°C
TJ, TSTG
-55 to +150
Thermal Resistance Ratings
Parameter
Maximum
Units
RθJA
Junction-to-Ambient ➃
100
°C/W
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
ISD ≤ -1.2A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs – duty cycle ≤ 2%
When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
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