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IRF7526D1

更新时间： 2024-11-19 22:11:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体肖特基二极管晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
8页 123K
描述
FETKY⑩ MOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V)

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中文翻译

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IRF7526D1 数据手册

 浏览型号IRF7526D1的Datasheet PDF文件第2页浏览型号IRF7526D1的Datasheet PDF文件第3页浏览型号IRF7526D1的Datasheet PDF文件第4页浏览型号IRF7526D1的Datasheet PDF文件第5页浏览型号IRF7526D1的Datasheet PDF文件第6页浏览型号IRF7526D1的Datasheet PDF文件第7页 
PD-91649C  
IRF7526D1  
TM  
FETKY MOSFET & Schottky Diode  
l Co-packaged HEXFET Power  
MOSFET and Schottky Diode  
l P-Channel HEXFET  
1
8
K
K
A
VDSS = -30V  
RDS(on) = 0.20Ω  
Schottky Vf = 0.39V  
2
7
A
3
4
6
5
l Low VF Schottky Rectifier  
l Generation 5 Technology  
S
D
D
G
TM  
l Micro8 Footprint  
Top View  
Description  
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the  
designer an innovative board space saving solution for switching regulator  
applications. Generation 5 HEXFETs utilize advanced processing techniques to  
achieve extremely low on-resistance per silicon area. Combining this technology  
with International Rectifier's low forward drop Schottky rectifiers results in an  
extremely efficient device suitable for use in a wide variety of portable electronics  
applications like cell phone, PDA, etc.  
ThenewMicro8TM package, withhalfthefootprintareaofthestandardSO-8, provides  
the smallest footprint available in an SOIC outline. This makes the Micro8TM an ideal  
device for applications where printed circuit board space is at a premium. The low  
profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin application  
environments such as portable electronics and PCMCIA cards.  
Micro8TM  
Absolute Maximum Ratings  
Parameter  
Maximum  
Units  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
-2.0  
Continuous Drain Current, VGS @ -4.5V  
Pulsed Drain Current ➀  
-1.6  
-16  
A
PD @TA = 25°C  
PD @TA = 70°C  
1.25  
W
Power Dissipation  
0.8  
Linear Derating Factor  
10  
mW/°C  
V
VGS  
Gate-to-Source Voltage  
± 20  
dv/dt  
Peak Diode Recovery dv/dt ➁  
Junction and Storage Temperature Range  
-5.0  
V/ns  
°C  
TJ, TSTG  
-55 to +150  
Thermal Resistance Ratings  
Parameter  
Maximum  
Units  
RθJA  
Junction-to-Ambient ➃  
100  
°C/W  
Notes:  
 Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)  
‚ ISD ≤ -1.2A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C  
ƒ Pulse width ≤ 300µs – duty cycle ≤ 2%  
„
When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance  
www.irf.com  
1
5/7/99  
12345678

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