Datasheet > IRF7530

IRF7530

更新时间： 2024-11-19 22:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	84K
描述
Power MOSFET(Vdss=20V, Rds(on)=0.030ohm)

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中文翻译

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数据手册
替代型号

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IRF7530 数据手册

PD-93760B

IRF7530

HEXFET^®Power MOSFET

ꢀꢀꢀTrench Technology

ꢀꢀꢀUltra Low On-Resistance

ꢀꢀꢀDual N-Channel MOSFET

ꢀꢀꢀVery Small SOIC Package

ꢀꢀꢀLow Profile (<1.1mm)

ꢀꢀꢀAvailable in Tape & Reel

V_DSS= 20V

G 1

D 1

D 2

G 2

R_DS(on)= 0.030Ω

Top View

Description

New trench HEXFET power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design that HEXFET

Power MOSFETs are well known for, provides the designer

withanextremelyefficientandreliabledeviceforuseinawide

varietyofapplications.

The new Micro8 package has half the footprint area of the

standard SO-8. This makes the Micro8 an ideal device for

applicationswhereprintedcircuitboardspaceisatapremium.

Thelowprofile(<1.1mm)oftheMicro8willallowittofiteasily

intoextremelythinapplicationenvironmentssuchasportable

electronics and PCMCIA cards.

Micro8

Absolute Maximum Ratings

Parameter

Drain- Source Voltage

Max.

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 4.5V

Pulsed Drain Current

5.4

4.3

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

1.3

0.80

Power Dissipation

Linear Derating Factor

mW/°C

E_AS

Single Pulse Avalanche Energy

Gate-to-Source Voltage

V_GS

± 12

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Max.

100

Units

°C/W

R_θJA

www.irf.com

02/16/01

12 3 4 5 6 7 8

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IRF7530 替代型号

型号	品牌	替代类型	描述	数据表
IRF7530PBF	INFINEON	完全替代	HEXFET Power MOSFET
IRF7530TRPBF	INFINEON	类似代替	Trench Technology
IRF7530TR	INFINEON	功能相似	Power Field-Effect Transistor, 5.4A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Met

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型号	品牌	获取价格	描述	数据表
IRF7530PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF7530TR	INFINEON	获取价格	Power Field-Effect Transistor, 5.4A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Met
IRF7530TRPBF	INFINEON	获取价格	Trench Technology
IRF7534D1	INFINEON	获取价格	FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.055ohm, Schottky Vf=0.39V)
IRF7534D1PBF	INFINEON	获取价格	MOSFET SCHOTTKY DIODE
IRF7555	INFINEON	获取价格	Power MOSFET(Vdss=-20V, Rds(on)=0.055ohm)
IRF7555PBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRF7555TR	INFINEON	获取价格	Power Field-Effect Transistor, 4.3A I(D), 20V, 0.055ohm, 2-Element, P-Channel, Silicon, Me
IRF7580MPbF	INFINEON	获取价格	DirectFETÂ® N-Channel Power MOSFET
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