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IRF7507TR PDF预览

IRF7507TR

更新时间: 2024-11-20 14:51:35
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 227K
描述
Power Field-Effect Transistor, 2.4A I(D), 20V, 0.14ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8

IRF7507TR 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.71
其他特性:LOGIC LEVEL COMPATIBLE配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (ID):2.4 A
最大漏源导通电阻:0.14 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL AND P-CHANNEL最大脉冲漏极电流 (IDM):19 A
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF7507TR 数据手册

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PD - 91269I  
IRF7507  
HEXFET® Power MOSFET  
l Generation V Technology  
l Ultra Low On-Resistance  
l Dual N and P Channel MOSFET  
l Very Small SOIC Package  
l Low Profile (<1.1mm)  
N-CHANNEL M OSFET  
1
8
D1  
S1  
N-Ch P-Ch  
2
7
G 1  
D 1  
3
4
6
5
VDSS 20V -20V  
S2  
D 2  
l Available in Tape & Reel  
l Fast Switching  
G 2  
D 2  
P-CHANNEL M OSFET  
RDS(on) 0.1350.27Ω  
Top View  
Description  
Fifth Generation HEXFETs from International Rectifier utilize advanced  
processing techniques to achieve extremely low on-resistance per silicon  
area. This benefit, combined with the fast switching speed and ruggedized  
device design that HEXFET Power MOSFETs are well known for, provides the  
designer with an extremely efficient and reliable device for use in a wide variety  
of applications.  
The new Micro8 package, with half the footprint area of the standard SO-8,  
provides the smallest footprint available in an SOIC outline. This makes the  
Micro8 an ideal device for applications where printed circuit board space is at  
a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into  
extremely thin application environments such as portable electronics and  
PCMCIA cards.  
Micro8  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
N-Channel  
P-Channel  
VDS  
Drain-Source Voltage  
20  
2.4  
1.9  
19  
-20  
-1.7  
-1.4  
-14  
V
A
ID @ TA = 25°C  
Continuous Drain Current, VGS  
Continuous Drain Current, VGS  
Pulsed Drain Current  
ID @ TA = 70°C  
IDM  
PD @TA = 25°C  
PD @TA = 70°C  
Maximum Power Dissipation„  
Maximum Power Dissipation„  
Linear Derating Factor  
1.25  
0.8  
10  
W
W
mW/°C  
V
VGS  
Gate-to-Source Voltage  
± 12  
16  
VGSM  
dv/dt  
Gate-to-Source Voltage Single Pulse tp<10µS  
Peak Diode Recovery dv/dt ‚  
Junction and Storage Temperature Range  
Soldering Temperature, for 10 seconds  
V
5.0  
-5.0  
V/ns  
°C  
TJ , TSTG  
-55 to + 150  
240 (1.6mm from case)  
Thermal Resistance  
Parameter  
Max.  
Units  
RθJA  
Maximum Junction-to-Ambient „  
100  
°C/W  
www.irf.com  
1
12/1/98  

IRF7507TR 替代型号

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