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IRF7507PBF PDF预览

IRF7507PBF

更新时间： 2024-11-20 03:35:47
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 214K
描述
HEXFET㈢Power MOSFET

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中文翻译

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IRF7507PBF 数据手册

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PD - 95218  
IRF7507PbF  
HEXFET® Power MOSFET  
l Generation V Technology  
l Ultra Low On-Resistance  
l Dual N and P Channel MOSFET  
l Very Small SOIC Package  
l Low Profile (<1.1mm)  
l Available in Tape & Reel  
l Fast Switching  
N-CHANNEL MOSFET  
1
2
3
4
8
D1  
S1  
N-Ch P-Ch  
7
G1  
D1  
6
5
VDSS 20V -20V  
S2  
D2  
G2  
D2  
P-CHANNEL MOSFET  
R
DS(on) 0.135Ω 0.27Ω  
Top View  
l Lead-Free  
Description  
Fifth Generation HEXFETs from International Rectifier utilize advanced  
processing techniques to achieve extremely low on-resistance per silicon area.  
This benefit, combined with the fast switching speed and ruggedized device  
design that HEXFET Power MOSFETs are well known for, provides the  
designer with an extremely efficient and reliable device for use in a wide variety  
of applications.  
The new Micro8 package, with half the footprint area of the standard SO-8,  
provides the smallest footprint available in an SOIC outline. This makes the  
Micro8 an ideal device for applications where printed circuit board space is at  
a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into  
extremely thin application environments such as portable electronics and  
PCMCIA cards.  
Micro8  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
N-Channel  
P-Channel  
VDS  
Drain-Source Voltage  
20  
2.4  
1.9  
19  
-20  
-1.7  
-1.4  
-14  
V
A
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS  
Continuous Drain Current, VGS  
Pulsed Drain Current  
PD @TA = 25°C  
PD @TA = 70°C  
Maximum Power Dissipation„  
Maximum Power Dissipation„  
Linear Derating Factor  
1.25  
0.8  
10  
W
W
mW/°C  
V
VGS  
Gate-to-Source Voltage  
± 12  
16  
VGSM  
dv/dt  
Gate-to-Source Voltage Single Pulse tp<10µS  
Peak Diode Recovery dv/dt ‚  
Junction and Storage Temperature Range  
Soldering Temperature, for 10 seconds  
V
5.0  
-5.0  
V/ns  
°C  
TJ , TSTG  
-55 to + 150  
240 (1.6mm from case)  
Thermal Resistance  
Max.  
100  
Units  
°C/W  
Parameter  
Maximum Junction-to-Ambient „  
RθJA  
www.irf.com  
1
5/11/04  
12345678

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IRF7507PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF7507TRPBF INFINEON

功能相似

 Generation V Technology
IRF7507TR INFINEON

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 Power Field-Effect Transistor, 2.4A I(D), 20V, 0.14ohm, 2-Element, N-Channel and P-Channel

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