Datasheet > IRF7507PBF

IRF7507PBF

更新时间： 2024-09-15 03:35:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	214K
描述
HEXFET㈢Power MOSFET

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中文翻译

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数据手册
替代型号

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IRF7507PBF 数据手册

PD - 95218

IRF7507PbF

HEXFET^®Power MOSFET

l Generation V Technology

l Ultra Low On-Resistance

l Dual N and P Channel MOSFET

l Very Small SOIC Package

l Low Profile (<1.1mm)

l Available in Tape & Reel

l Fast Switching

N-CHANNEL MOSFET

N-Ch P-Ch

V_DSS20V -20V

P-CHANNEL MOSFET

_DS(on)0.135Ω 0.27Ω

Top View

l Lead-Free

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device

design that HEXFET Power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device for use in a wide variety

of applications.

The new Micro8 package, with half the footprint area of the standard SO-8,

provides the smallest footprint available in an SOIC outline. This makes the

Micro8 an ideal device for applications where printed circuit board space is at

a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into

extremely thin application environments such as portable electronics and

PCMCIA cards.

Micro8

Absolute Maximum Ratings

Parameter

Max.

Units

N-Channel

P-Channel

V_DS

Drain-Source Voltage

2.4

1.9

-20

-1.7

-1.4

-14

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS

Pulsed Drain Current

P_D@T_A= 25°C

P_D@T_A= 70°C

Maximum Power Dissipation

Linear Derating Factor

1.25

0.8

mW/°C

V_GS

Gate-to-Source Voltage

± 12

V_GSM

dv/dt

Gate-to-Source Voltage Single Pulse tp<10µS

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Soldering Temperature, for 10 seconds

5.0

-5.0

V/ns

°C

T_J, T_STG

-55 to + 150

240 (1.6mm from case)

Thermal Resistance

Max.

100

Units

°C/W

Parameter

Maximum Junction-to-Ambient

R_θJA

www.irf.com

5/11/04

12 3 4 5 6 7 8

中文翻译

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IRF7507PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRF7507TRPBF	INFINEON	功能相似	Generation V Technology
IRF7507TR	INFINEON	功能相似	Power Field-Effect Transistor, 2.4A I(D), 20V, 0.14ohm, 2-Element, N-Channel and P-Channel

与IRF7507PBF相关器件

型号	品牌	获取价格	描述	数据表
IRF7507PBF_15	INFINEON	获取价格	Ultra Low On-Resistance
IRF7507TR	INFINEON	获取价格	Power Field-Effect Transistor, 2.4A I(D), 20V, 0.14ohm, 2-Element, N-Channel and P-Channel
IRF7507TRPBF	INFINEON	获取价格	Generation V Technology
IRF7509	INFINEON	获取价格	Power MOSFET(Vdss=+-30V)
IRF7509PBF	INFINEON	获取价格	HEXFET㈢Power MOSFET
IRF7509PBF-1	INFINEON	获取价格	Small Signal Field-Effect Transistor,
IRF7509TR	INFINEON	获取价格	Power MOSFET(Vdss=+-30V)
IRF7509TRPBF	INFINEON	获取价格	Generation V Technology
IRF7509TRPBF-1	INFINEON	获取价格	Small Signal Field-Effect Transistor,
IRF750A	FAIRCHILD	获取价格	Advanced Power MOSFET