Datasheet > IRF7509PBF-1

IRF7509PBF-1

更新时间： 2024-11-24 14:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	236K
描述
Small Signal Field-Effect Transistor,

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中文翻译

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数据手册

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IRF7509PBF-1 数据手册

IRF7509PbF-1

HEXFET^®Power MOSFET

N-CH P-CH

N-CHANNEL MOSFET

V_DS

0.11

7.8

-30

R_{DS(on) max}

(@V_GS= 10V)

Q_{g (typical)}

I_D

0.2

7.5

-2.0

2.7

P-CHANNEL MOSFET

(@T_A= 25°C)

Micro8

Top View

Features

Benefits

Industry-standard pinout Micro-8 Package

Multi-Vendor Compatibility

⇒

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

MSL1, Industrial qualification

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

Standard Pack

Form

Base Part Number

Package Type

Orderable Part Number

Quantity

Tube/Bulk

Tape and Reel

4000

IRF7509PbF-1

IRF7509TRPbF-1

IRF7509PbF-1

Micro-8

Absolute Maximum Ratings

Parameter

Max.

Units

N-Channel

P-Channel

-30

V_DS

Drain-Source Voltage

2.7

2.1

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS

Pulsed Drain Current

-2.0

-1.6

-16

P_D@T_A= 25°C

P_D@T_A= 70°C

Maximum Power Dissipation

Linear Derating Factor

1.25

0.8

mW/°C

V_GS

Gate-to-Source Voltage

± 20

V_GSM

dv/dt

Gate-to-Source Voltage Single Pulse tp<10μS

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Soldering Temperature, for 10 seconds

5.0

V/ns

°C

T_J, T_STG

-55 to + 150

240 (1.6mm from case)

Thermal Resistance

Parameter

Max.

Units

R_θJA

Maximum Junction-to-Ambient

100

°C/W

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June 27, 2014

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