Datasheet > IRF7521D1

IRF7521D1

更新时间： 2024-11-23 22:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		肖特基二极管
页数	文件大小	规格书
8页	179K
描述
FETKY⑩ MOSFET / Schottky Diode(Vdss=20V, Rds(on)=0.135ohm, Schottky Vf=0.39V)

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IRF7521D1 数据手册

PD-91646C

IRF7521D1

PRELIMINARY

FETKY MOSFET / Schottky Diode

● Co-packaged HEXFET^®Power MOSFET

and Schottky Diode

● N-Channel HEXFET

V_DSS= 20V

● Low V_FSchottky Rectifier

● Generation 5 Technology

● Micro8 Footprint

_DS(on)= 0.135Ω

Schottky Vf = 0.39V

Top View

Description

The FETKY^TMfamily of co-packaged HEXFETs and Schottky diodes offer the

designer an innovative board space saving solution for switching regulator

applications. Generation 5 HEXFETs utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area. Combining this technology

with International Rectifier's low forward drop Schottky rectifiers results in an

extremely efficient device suitable for use in a wide variety of portable electronics

applications like cell phone, PDA, etc.

Micro8^TM

The new Micro8^TMpackage, with half the footprint area of the standard SO-8,

provides the smallest footprint available in an SOIC outline. This makes the Micro8^TM

an ideal device for applications where printed circuit board space is at a premium.

The low profile (<1.1mm) of the Micro8^TMwill allow it to fit easily into extremely thin

application environments such as portable electronics and PCMCIA cards.

Absolute Maximum Ratings (T_A= 25°C unless otherwise noted)

Parameter

Maximum

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 4.5V

2.4

1.9

Pulsed Drain Current ➀

Power Dissipation

1.3

P_D@T_A= 25°C

P_D@T_A= 70°C

0.8

Linear Derating Factor

mW/°C

V_GS

Gate-to-Source Voltage

± 12

dv/dt

Peak Diode Recovery dv/dt ➁

Junction and Storage Temperature Range

5.0

V/ns

°C

T_J,T_STG

-55 to +150

Thermal Resistance Ratings

Parameter

Maximum

Units

R_θJA

Junction-to-Ambient ➃

100

°C/W

Notes:

➀ Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)

➁ I_SD≤ 1.7A, di/dt ≤ 66A/µs, V_DD≤ V_(BR)DSS, T_J≤ 150°C

➂ Pulse width ≤ 300µs; duty cycle ≤ 2%

➃ Surface mounted on FR-4 board, t ≤ 10sec.

www.irf.com

01/29/99

12 3 4 5 6 7 8

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