IRF7506

更新时间： 2024-09-14 22:31:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	105K
描述
Power MOSFET(Vdss=-30V, Rds(on)=0.27ohm)

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IRF7506 数据手册

PD - 9.1268F

IRF7506

HEXFET^®Power MOSFET

l Generation V Technology

l Ultra Low On-Resistance

l Dual P-Channel MOSFET

l Very Small SOIC Package

l Low Profile (<1.1mm)

l Available in Tape & Reel

l Fast Switching

V_DSS= -30V

R_DS(on)= 0.27Ω

To p V iew

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedizeddevicedesignthatHEXFETPowerMOSFETs

arewellknownfor,providesthedesignerwithanextremely

efficient and reliable device for use in a wide variety of

applications.

ThenewMicro8package,withhalfthefootprintareaofthe

standardSO-8,providesthesmallestfootprintavailablein

an SOIC outline. This makes the Micro8 an ideal device

for applications where printed circuit board space is at a

premium. The low profile (<1.1mm) of the Micro8 will

allow it to fit easily into extremely thin application

environments such as portable electronics and PCMCIA

cards.

MICRO8

Absolute Maximum Ratings

Parameter

Max.

-1.7

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-1.4

-9.6

P_D@T_A= 25°C

Power Dissipation

1.25

mW/°C

Linear Derating Factor

V_GS

Gate-to-Source Voltage

± 20

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

5.0

V/ns

°C

-55 to + 150

Thermal Resistance Ratings

Parameter

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

–––

100

°C/W

All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective

only for product marked with Date Code 505 or later .

8/25/97

12 3 4 5 6 7 8

中文翻译

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与IRF7506相关器件

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IRF7506PBF	INFINEON	获取价格	HEXFET Power MOSFET (VDSS=-30V , RDS(on)=O.27ohm)
IRF7506TR	INFINEON	获取价格	Power Field-Effect Transistor, 1.7A I(D), 30V, 0.27ohm, 2-Element, P-Channel, Silicon, Met
IRF7506TRPBF	INFINEON	获取价格	Generation V Technology
IRF7507	INFINEON	获取价格	Power MOSFET(Vdss=+-20V)
IRF7507PBF	INFINEON	获取价格	HEXFET㈢Power MOSFET
IRF7507PBF_15	INFINEON	获取价格	Ultra Low On-Resistance
IRF7507TR	INFINEON	获取价格	Power Field-Effect Transistor, 2.4A I(D), 20V, 0.14ohm, 2-Element, N-Channel and P-Channel
IRF7507TRPBF	INFINEON	获取价格	Generation V Technology
IRF7509	INFINEON	获取价格	Power MOSFET(Vdss=+-30V)
IRF7509PBF	INFINEON	获取价格	HEXFET㈢Power MOSFET