Datasheet > IRF7507

IRF7507

更新时间： 2024-09-15 22:31:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	218K
描述
Power MOSFET(Vdss=+-20V)

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IRF7507 数据手册

PD - 91269I

IRF7507

HEXFET^®Power MOSFET

l Generation V Technology

l Ultra Low On-Resistance

l Dual N and P Channel MOSFET

l Very Small SOIC Package

l Low Profile (<1.1mm)

N-CHANNEL M OSFET

N-Ch P-Ch

G 1

D 1

V_DSS20V -20V

D 2

l Available in Tape & Reel

l Fast Switching

G 2

D 2

P-CHANNEL M OSFET

R_DS(on)0.135Ω 0.27Ω

Top View

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve extremely low on-resistance per silicon

area. This benefit, combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device for use in a wide variety

of applications.

The new Micro8 package, with half the footprint area of the standard SO-8,

provides the smallest footprint available in an SOIC outline. This makes the

Micro8 an ideal device for applications where printed circuit board space is at

a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into

extremely thin application environments such as portable electronics and

PCMCIA cards.

Micro8

Absolute Maximum Ratings

Parameter

Max.

Units

N-Channel

P-Channel

V_DS

Drain-Source Voltage

2.4

1.9

-20

-1.7

-1.4

-14

I_D@ T_A= 25°C

Continuous Drain Current, V_GS

Pulsed Drain Current

I_D@ T_A= 70°C

I_DM

P_D@T_A= 25°C

P_D@T_A= 70°C

Maximum Power Dissipation

Linear Derating Factor

1.25

0.8

mW/°C

V_GS

Gate-to-Source Voltage

± 12

V_GSM

dv/dt

Gate-to-Source Voltage Single Pulse tp<10µS

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Soldering Temperature, for 10 seconds

5.0

-5.0

V/ns

°C

T_J, T_STG

-55 to + 150

240 (1.6mm from case)

Thermal Resistance

Parameter

Max.

Units

R_θJA

Maximum Junction-to-Ambient

100

°C/W

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