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IRF7494TRPBF PDF预览

IRF7494TRPBF

更新时间: 2024-11-04 12:02:39
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 228K
描述
HEXFETPower MOSFET

IRF7494TRPBF 数据手册

 浏览型号IRF7494TRPBF的Datasheet PDF文件第2页浏览型号IRF7494TRPBF的Datasheet PDF文件第3页浏览型号IRF7494TRPBF的Datasheet PDF文件第4页浏览型号IRF7494TRPBF的Datasheet PDF文件第5页浏览型号IRF7494TRPBF的Datasheet PDF文件第6页浏览型号IRF7494TRPBF的Datasheet PDF文件第7页 
PD - 95349C  
IRF7494PbF  
HEXFET® Power MOSFET  
Applications  
l High frequency DC-DC converters  
l Lead-Free  
VDSS  
150V  
RDS(on) max  
ID  
5.1A  
44m @V = 10V  
GS  
Benefits  
A
A
l Low Gate to Drain Charge to Reduce  
Switching Losses  
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design, (See  
App. Note AN1001)  
1
2
3
4
8
S
S
D
7
D
6
S
D
5
G
D
l Fully Characterized Avalanche Voltage  
and Current  
SO-8  
Top View  
Absolute Maximum Ratings  
Parameter  
Max.  
150  
± 20  
5.1  
Units  
VDS  
VGS  
Drain-to-Source Voltage  
V
Gate-to-Source Voltage  
I
I
I
@ T = 25°C  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
D
D
A
@ T = 70°C  
A
4.0  
A
40  
DM  
P
@T = 25°C  
A
2.5  
W
Maximum Power Dissipation  
Linear Derating Factor  
D
0.02  
33  
-55 to + 150  
W/°C  
V/ns  
dv/dt  
Peak Diode Recovery dv/dt  
Operating Junction and  
T
J
°C  
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
20  
Units  
Junction-to-Drain Lead  
RθJL  
RθJA  
°C/W  
Junction-to-Ambient (PCB Mount)  
–––  
50  
Notes  through ‡ are on page 8  
www.irf.com  
1
10/15/09  

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