Datasheet > FGA6530WDF

FGA6530WDF

更新时间： 2024-09-20 11:12:11

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
10页	496K
描述
650 V、30 A 场截止沟道 IGBT

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FGA6530WDF 数据手册

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与FGA6530WDF相关器件

型号	品牌	获取价格	描述	数据表
FGA6540WDF	ONSEMI	获取价格	IGBT，650 V，40A，场截止沟槽
FGA6560WDF	ONSEMI	获取价格	IGBT，650V，60A，场截止沟槽
FGA70N30T	FAIRCHILD	获取价格	300V, 70A PDP IGBT
FGA70N30TD	FAIRCHILD	获取价格	300V, 70A PDP IGBT
FGA70N30TDTU	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 40A I(C), 300V V(BR)CES, N-Channel, ROHS COMPLIANT, TO-
FGA70N30TTU	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 300V V(BR)CES, N-Channel, ROHS COMPLIANT, TO-3PN, 3 PIN
FGA70N30TTU	ROCHESTER	获取价格	300V, N-CHANNEL IGBT, ROHS COMPLIANT, TO-3PN, 3 PIN
FGA70N33BTD	FAIRCHILD	获取价格	330V, 70A PDP IGBT
FGA70N33BTDTU	FAIRCHILD	获取价格	330V, 70A PDP IGBT
FGA90N30	FAIRCHILD	获取价格	300V PDP IGBT

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