Datasheet > FGAF40N60SMD

FGAF40N60SMD

更新时间： 2024-11-09 11:15:39

品牌	Logo	应用领域
安森美 - ONSEMI		局域网电动机控制栅双极性晶体管
页数	文件大小	规格书
11页	508K
描述
IGBT，600V，40A，场截止

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技术参数
数据手册

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FGAF40N60SMD 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	FLANGE MOUNT, R-PSFM-T3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
Factory Lead Time：	6 weeks	风险等级：	1.37
Is Samacsys：	N	外壳连接：	ISOLATED
最大集电极电流 (IC)：	80 A	集电极-发射极最大电压：	600 V
配置：	SINGLE WITH BUILT-IN DIODE	最大降落时间（tf）：	17 ns
门极发射器阈值电压最大值：	6 V	门极-发射极最大电压：	20 V
JESD-30 代码：	R-PSFM-T3	JESD-609代码：	e3
元件数量：	1	端子数量：	3
最高工作温度：	175 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	115 W	子类别：	Insulated Gate BIP Transistors
表面贴装：	NO	端子面层：	Tin (Sn)
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	MOTOR CONTROL
晶体管元件材料：	SILICON	标称断开时间 (toff)：	132 ns
标称接通时间 (ton)：	37 ns	Base Number Matches：	1

FGAF40N60SMD 数据手册

Is Now Part of

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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor

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email any questions regarding the system integration to Fairchild_questions@onsemi.com.

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与FGAF40N60SMD相关器件

型号	品牌	获取价格	描述	数据表
FGAF40N60UF	FAIRCHILD	获取价格	Ultrafast IGBT
FGAF40N60UFD	FAIRCHILD	获取价格	Ultrafast IGBT
FGAF40N60UFDTU	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, TO-3PF,
FGAF40N60UFDTU	ROCHESTER	获取价格	40A, 600V, N-CHANNEL IGBT, LEAD FREE, TO-3PF, 3 PIN
FGAF40N60UFDTU	ONSEMI	获取价格	600V，PT IGBT
FGAF40N60UFDTU_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, TO-3PF,
FGAF40N60UFTU	FAIRCHILD	获取价格	High Speed Switching
FGAF40N60UFTU	ONSEMI	获取价格	IGBT，600V，PT
FGAF40N60UFTU_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, TO-3PF,
FGAF40S65AQ	ONSEMI	获取价格	IGBT，650V，40A，场截止沟槽

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