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FGAF40N60UFTU PDF预览

FGAF40N60UFTU

更新时间: 2024-09-20 11:14:19
品牌 Logo 应用领域
安森美 - ONSEMI 局域网双极性晶体管功率控制
页数 文件大小 规格书
9页 405K
描述
IGBT,600V,PT

FGAF40N60UFTU 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:1 week风险等级:0.8
外壳连接:ISOLATED最大集电极电流 (IC):40 A
集电极-发射极最大电压:600 V配置:SINGLE
最大降落时间(tf):250 ns门极发射器阈值电压最大值:6.5 V
门极-发射极最大电压:20 VJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):100 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):190 ns
标称接通时间 (ton):67 nsBase Number Matches:1

FGAF40N60UFTU 数据手册

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