Datasheet > 晶体管 > IGBT> FGA70N33BTD

FGA70N33BTD

更新时间： 2024-09-19 06:59:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		光电二极管双极性晶体管
页数	文件大小	规格书
9页	750K
描述
330V, 70A PDP IGBT

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数据手册

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FGA70N33BTD 数据手册

November 2008

FGA70N33BTD

330V, 70A PDP IGBT

Features

General Description

•

High current capability

Using Novel Trench IGBT Technology, Fairchild’s new series of

trench IGBTs offer the optimum performance for PDP

applications where low conduction and switching losses are

essential.

Low saturation voltage: V_CE(sat)=1.7V @ I_C= 70A

High input impedance

Fast switching

RoHS Compliant

Applications

•

PDP System

TO-3P

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Description

Ratings

330

Units

V_CES

Collector to Emitter Voltage

V_GES

Gate to Emitter Voltage

Pulsed Collector Current

± 30

@ T_C= 25^oC

I_Cpulse(1)

160

@ T_C= 25^oC

@ T_C= 100^oC

I_{C pulse(2)}

Pulsed Collector Current

220

Maximum Power Dissipation

149

P_D

Maximum Power Dissipation

V_RRM

I_F(AV)

I_FSM

Peak Repetitive Reverse Voltage of Diode

Average Rectified Forward Current of diode @ T_C= 100^oC

330

Non-repetitive Peak Surge Current of diode

60Hz Single Half-Sine wave

100

T_J, T_stg

T_L

Operating Junction Temperature and Storage Temperrature

-55 to +150

300

^oC

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

0.84

1.57

Units

^oC/W

R_θJC(IGBT)

R_θJC(Diode)

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Notes:

1: Repetitive test , Pulse width=100usec , Duty=0.1

2: Half Sine Wave, D< 0.01, pluse width < 5usec

*I _pulse limited by max Tj

FGA70N33BTD Rev. A

www.fairchildsemi.com

12 3 4 5 6 7...9

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