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FGAF20N60SMMF PDF预览

FGAF20N60SMMF

更新时间: 2024-09-19 20:40:19
品牌 Logo 应用领域
MICROSS
页数 文件大小 规格书
4页 387K
描述
Insulated Gate Bipolar Transistor,

FGAF20N60SMMF 数据手册

 浏览型号FGAF20N60SMMF的Datasheet PDF文件第2页浏览型号FGAF20N60SMMF的Datasheet PDF文件第3页浏览型号FGAF20N60SMMF的Datasheet PDF文件第4页 
Field Stop IGBT Chip  
FGAF20N60SM  
600V, 20A, VCE(sat) = 1.7V  
Part  
VCES  
ICn  
VCE (sat) Typ  
1.7  
Die Size  
4.3 x 3.2 mm2  
FGAF20N60SM  
600V  
20A  
See page 2 for ordering part numbers & supply formats  
Features  
Applications  
Low Saturation Voltage  
Inverter Modules  
Positive Temp Co-efficient for paralleling  
Tightened Parameter Distribution  
Ratings  
Welding & Drive Applications  
Maximum Ratings  
Symbol  
VCES  
Parameter  
Units  
V
Collector to Emitter Voltage  
Gate to Emitter Voltage  
600  
±20  
VGES  
V
IC  
Drain Current1  
Continuous (TC = 25°C)  
Continuous (TC = 100°C)  
Pulsed Collector Current  
Operation Junction & Storage Temperature  
40  
20  
A
A
ICM  
60  
A
TJ, TSTG  
-55 to 175  
°C  
Static Characteristics, TJ = 25° unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Units  
BVCES  
ICES  
Collector to Emitter Breakdown Voltage  
Collector Cut-Off Current  
VGE = 0V, IC = 250µA  
VCE = VCES , VGE = 0V  
VGE = VGES, VCE = 0V  
600  
-
-
-
-
V
-
-
250  
±400  
µA  
nA  
IGES  
G-E Leakage Current  
On Characteristics, TJ = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Units  
VGE(th)  
G-E Threshold Voltage  
IC = 250µA, VCE = VGE  
IC = 20A, VGE = 15V  
3.5  
4.7  
1.7  
1.9  
6.0  
V
V
V
-
-
-
-
VCE(sat)  
Collector to Emitter Saturation Voltage  
IC = 20A, VGE = 15V  
TC = 175°C  
Further Information - Contact your Micross sales office or email your enquiry to baredie@micross.com  

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