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FGAF30S65AQ PDF预览

FGAF30S65AQ

更新时间： 2024-11-09 11:09:47
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
9页 298K
描述
IGBT, 650 V,30A Field Stop Trench

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中文翻译

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FGAF30S65AQ 数据手册

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Field Stop Trench IGBT,  
30 A, 650 V  
FGAF30S65AQ  
Using novel field stop IGBT technology, ON Semiconductor’s new  
th  
series of field stop 4 generation of RC IGBTs offer the optimum  
performance for PFC applications and welder where low conduction  
and switching losses are essential.  
www.onsemi.com  
Features  
30 A, 650 V  
CE(sat) = 1.4 V (Typ.)  
• Maximum Junction Temperature: T = 175°C  
J
V
• Positive Temperature Co−efficient for Easy Parallel Operating  
• High Current Capability  
C
• Low Saturation Voltage: V  
= 1.4 V (Typ.) @ I = 30 A  
C
CE(Sat)  
• 100% of the Parts Tested for I (Note 1)  
LM  
• High Input Impedance  
G
• Fast Switching  
E
• Tighten Parameter Distribution  
• IGBT with Monolithic Reverse Conducting Diode  
• This Device is Pb−Free and is RoHS Compliant  
Typical Applications  
• PFC, Welder  
MAXIMUM RATINGS  
TO−3PF  
CASE 340AH  
Rating  
Symbol  
Value  
Unit  
V
Collector to Emitter Voltage  
V
CES  
V
GES  
650  
MARKING DIAGRAM  
Gate to Emitter Voltage  
Transient Gate to Emitter Voltage  
20  
30  
V
Collector Current  
@T = 25°C  
C
I
C
60  
30  
A
C
@T = 100°C  
Pulsed Collector Current (Note 1)  
Pulsed Collector Current (Note 2)  
I
90  
90  
A
A
A
LM  
I
CM  
&Y  
Diode Forward Current  
@T = 25°C  
I
F
30  
15  
C
FGAF30S65  
AQ&E&3&K  
@ T = 100°C  
C
Pulsed Diode Maximum Forward Current  
I
90  
A
FM  
Maximum Power Dissipation@T = 25°C  
P
D
83  
42  
W
C
@ T = 100°C  
C
G
C
E
Operating Junction / Storage Temperature T , T  
−55 to  
°C  
°C  
J
STG  
Range  
+175  
&Y  
&E  
&3  
&K  
= ON Semiconductor Logo  
= Designate space on marking  
= 3−Digit Data Code  
Maximum Lead Temp. for Soldering Pur-  
poses, 1/8″ from case for 5 seconds  
T
L
260  
= 2−Digit Lot Traceability Code  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
FGAF30S65AQ = Specific Device Code  
1. V = 400 V, V = 15 V, I = 90 A, R = 13 W, Inductive Load, 100% Tested  
CC  
GE  
C
G
2. Repetitive rating: pulse width limited by max. Junction temperature  
ORDERING INFORMATION  
Device  
Package  
Shipping  
FGAF30S65AQ  
TO−3PF−3L  
30 Units / Rail  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
June, 2020 − Rev. 2  
FGAF30S65AQ/D  
 
1234567...9

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