型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FGA90N33ATDTU | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel, ROHS COMPLIANT, TO- | |
FGA90N33ATDTU | ONSEMI |
获取价格 |
330V,PDP 沟槽 IGBT | |
FGA90N33ATTU | ONSEMI |
获取价格 |
Discrete IGBT, TO-3PN 3L, 3600-RAIL | |
FGA90N33ATTU | ROCHESTER |
获取价格 |
90A, 330V, N-CHANNEL IGBT, ROHS COMPLIANT, TO-3P, 3 PIN | |
FGA90N33ATTU | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel, ROHS COMPLIANT, TO- | |
FGAF20N60SMD | FAIRCHILD |
获取价格 |
600 V, 20 A Field Stop IGBT | |
FGAF20N60SMD | ONSEMI |
获取价格 |
IGBT,600V,20A,场截止 | |
FGAF20N60SMMD | MICROSS |
获取价格 |
Insulated Gate Bipolar Transistor, | |
FGAF20N60SMMF | MICROSS |
获取价格 |
Insulated Gate Bipolar Transistor, | |
FGAF20S65AQ | ONSEMI |
获取价格 |
IGBT, 650 V, 20A Field Stop Trench |