Datasheet > FGA90N33ATTU

FGA90N33ATTU

更新时间： 2024-09-19 21:22:11

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
8页	621K
描述
Discrete IGBT, TO-3PN 3L, 3600-RAIL

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中文翻译

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技术参数
数据手册

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FGA90N33ATTU 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.83	Base Number Matches：	1

FGA90N33ATTU 数据手册

April 2008

FGA90N33AT

330V, 90A PDP Trench IGBT

Features

General Description

•

High current capability

Using Novel Trench IGBT Technology, Fairchild’s new series of

trench IGBTs offer the optimum performance for PDP applica-

tions where low conduction and switching losses are essential.

Low saturation voltage: V_CE(sat)=1.1V @ I_C= 20A

High input impedance

Fast switching

RoHS compliant

Applications

•

PDP System

TO-3P

Absolute Maximum Ratings

Symbol

Description

Ratings

330

Units

V_CES

Collector to Emitter Voltage

Gate to Emitter Voltage

Collector Current

V_GES

± 30

I_C

@ T_C= 25^oC

I_{C pulse(1)}

I_{C pulse(2)}

Pulsed Collector Current

220

@ T_C= 25^oC

@ T_C= 100^oC

330

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

223

^oC

P_D

T_J

-55 to +150

T_stg

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

^oC

T_L

300

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

0.56

Units

^oC/W

R_θJC(IGBT)

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Notes:

(1) Repetitive test , Pulse width=100usec , Duty=0.1

(2) Half sine wave , D<0.01, Pulse width<5usec

*I pluse limited by max Tj

FGA90N33AT Rev. A

www.fairchildsemi.com

12 3 4 5 6 7 8

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