Datasheet > FGA90N33ATDTU

FGA90N33ATDTU

更新时间： 2024-11-09 11:13:55

品牌	Logo	应用领域
安森美 - ONSEMI		局域网瞄准线双极性晶体管功率控制光电二极管
页数	文件大小	规格书
11页	517K
描述
330V，PDP 沟槽 IGBT

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FGA90N33ATDTU 技术参数

是否无铅：	不含铅	生命周期：	Not Recommended
包装说明：	FLANGE MOUNT, R-PSFM-T3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
Factory Lead Time：	1 week	风险等级：	5.23
其他特性：	LOW CONDUCTION LOSS	最大集电极电流 (IC)：	90 A
集电极-发射极最大电压：	330 V	配置：	SINGLE WITH BUILT-IN DIODE
JESD-30 代码：	R-PSFM-T3	JESD-609代码：	e3
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	NO
端子面层：	MATTE TIN	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	POWER CONTROL	晶体管元件材料：	SILICON
标称断开时间 (toff)：	360 ns	标称接通时间 (ton)：	60 ns
Base Number Matches：	1

FGA90N33ATDTU 数据手册

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与FGA90N33ATDTU相关器件

型号	品牌	获取价格	描述	数据表
FGA90N33ATTU	ONSEMI	获取价格	Discrete IGBT, TO-3PN 3L, 3600-RAIL
FGA90N33ATTU	ROCHESTER	获取价格	90A, 330V, N-CHANNEL IGBT, ROHS COMPLIANT, TO-3P, 3 PIN
FGA90N33ATTU	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel, ROHS COMPLIANT, TO-
FGAF20N60SMD	FAIRCHILD	获取价格	600 V, 20 A Field Stop IGBT
FGAF20N60SMD	ONSEMI	获取价格	IGBT，600V，20A，场截止
FGAF20N60SMMD	MICROSS	获取价格	Insulated Gate Bipolar Transistor,
FGAF20N60SMMF	MICROSS	获取价格	Insulated Gate Bipolar Transistor,
FGAF20S65AQ	ONSEMI	获取价格	IGBT, 650 V, 20A Field Stop Trench
FGAF30S65AQ	ONSEMI	获取价格	IGBT, 650 V,30A Field Stop Trench
FGAF40N60SMD	FAIRCHILD	获取价格	600 V, 40 A Field Stop IGBT

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