Datasheet > FGA70N30TD

FGA70N30TD

更新时间： 2024-09-19 03:36:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		光电二极管双极性晶体管
页数	文件大小	规格书
9页	599K
描述
300V, 70A PDP IGBT

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中文翻译

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数据手册

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FGA70N30TD 数据手册

December 2007

FGA70N30TD

300V, 70A PDP IGBT

Features

General Description

•

High current capability

Using Novel Trench IGBT Technology, Fairchild’s new series

of trench IGBTs offer the optimum performance for PDP applica-

tions where low conduction and switching losses are essential.

Low saturation voltage: V_CE(sat)=1.5V @ I_C= 40A

High input impedance

Fast switching

RoHS complaint

Application

. PDP System

TO-3P

Absolute Maximum Ratings

Symbol

Description

Ratings

300

Units

V_CES

Collector-Emitter Voltage

V_GES

I_{C pulse(1)*}

I_F

Gate-Emitter Voltage

±30

Pulsed Collector Current

@ T_C

25^oC

160

Diode Continuous Forward Current

Diode Maximum Forward Current

Maximum Power Dissipation

@ T_C= 100°C

I_FM

@ T_C

25^oC

201

P_D

Maximum Power Dissipation

@ T_C= 100^oC

90.6

T_J

Operating Junction Temperature

Storage Temperature Range

-55 to +150

^oC

T_stg

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

T_L

300

^oC

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

0.62

1.56

Units

^oC/W

R_θJC(IGBT)

Thermal Resistance, Junction-to-Case

R_θJC(DIODE) Thermal Resistance, Junction-to-Case for Diode

R_θJA

Thermal Resistance, Junction-to-Ambient

Notes:

(1)Repetitive test , pluse width = 100usec , Duty = 0.2

* Ic_pluse limited by max Tj

FGA70N30TD Rev. A

www.fairchildsemi.com

12 3 4 5 6 7...9

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