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FGA6560WDF PDF预览

FGA6560WDF

更新时间: 2024-11-09 11:14:35
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
10页 2541K
描述
IGBT,650V,60A,场截止沟槽

FGA6560WDF 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:6 weeks风险等级:1.43
最大集电极电流 (IC):120 A集电极-发射极最大电压:650 V
配置:SINGLE WITH BUILT-IN DIODE门极发射器阈值电压最大值:7.6 V
门极-发射极最大电压:20 VJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):306 W表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):99 ns标称接通时间 (ton):85.6 ns
VCEsat-Max:2.3 VBase Number Matches:1

FGA6560WDF 数据手册

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