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FDMC8588DC

更新时间： 2024-11-22 11:14:55
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
9页 467K
描述
25V N沟道PowerTrench® MOSFET

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中文翻译

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FDMC8588DC 技术参数

是否无铅：不含铅生命周期：Active
包装说明：SMALL OUTLINE, S-PDSO-N5Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：8 weeks风险等级：0.99
Is Samacsys：N雪崩能效等级（Eas）：29 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：25 V最大漏极电流 (Abs) (ID)：40 A
最大漏极电流 (ID)：17 A最大漏源导通电阻：0.005 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：MO-240BA
JESD-30 代码：S-PDSO-N5JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：5工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：SQUARE封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：41 W最大脉冲漏极电流 (IDM)：60 A
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin (Sn)端子形式：NO LEAD
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FDMC8588DC 数据手册

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FDMC86102LZ FAIRCHILD

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FDMC86102LZ ONSEMI

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