Datasheet > FDMC86102_12

FDMC86102_12

更新时间： 2022-04-07 14:42:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	283K
描述
N-Channel Power TrenchÂ® MOSFET 100 V, 20 A, 24 mÎ©

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FDMC86102_12 数据手册

March 2012

FDMC86102

N-Channel Power Trench^®MOSFET

100 V, 20 A, 24 mΩ

Features

General Description

Max r_DS(on)= 24 mΩ at V_GS= 10 V, I_D= 7 A

Max r_DS(on)= 38 mΩ at V_GS= 6 V, I_D= 5 A

Low Profile - 1 mm max in Power 33

100% UIL Tested

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced Power Trench^®process that has

been especially tailored to minimize the on-state resistance and

yet maintain superior switching performance.

RoHS Compliant

Application

DC - DC Conversion

Bottom

Top

Pin 1

Power 33

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

100

±20

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25 °C

_C= 25 °C

I_D

T_A= 25 °C

(Note 1a)

(Note 3)

-Pulsed

E_AS

Single Pulse Avalanche Energy

Power Dissipation

T_C= 25 °C

T_A= 25 °C

P_D

Power Dissipation

(Note 1a)

2.3

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13’’

Tape Width

12 mm

Quantity

FDMC86102

Power 33

3000 units

FDMC86102 Rev.C1

www.fairchildsemi.com

12 3 4 5 6 7

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