Datasheet > FDMC86244

FDMC86244

更新时间： 2024-09-08 11:59:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管开关脉冲光电二极管
页数	文件大小	规格书
7页	324K
描述
N-Channel Power TrenchÂ® MOSFET 150 V, 9.4 A, 134 mÎ©

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FDMC86244 数据手册

February 2012

FDMC86244

N-Channel Power Trench^®MOSFET

150 V, 9.4 A, 134 mΩ

Features

General Description

Max r_DS(on)= 134 mΩ at V_GS= 10 V, I_D= 2.8 A

Max r_DS(on)= 186 mΩ at V_GS= 6 V, I_D= 2.4 A

Low Profile - 1 mm max in Power 33

100% UIL Tested

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced Power Trench^®process that has

been especially tailored to minimize the on-state resistance and

yet maintain superior switching performance.

RoHS Compliant

Application

DC - DC Conversion

Bottom

D D

Top

G S

MLP 3.3x3.3

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous

-Continuous

150

±20

T_C= 25°C

T_A= 25°C

9.4

I_D

(Note 1a)

(Note 3)

2.8

-Pulsed

E_AS

Single Pulse Avalanche Energy

Power Dissipation

T_C= 25°C

T_A= 25°C

P_D

Power Dissipation

(Note 1a)

2.3

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to + 150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

4.7

°C/W

(Note 1a)

125

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13’’

Tape Width

12 mm

Quantity

FDMC86244

Power 33

3000 units

FDMC86244 Rev.C1

www.fairchildsemi.com

12 3 4 5 6 7

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与FDMC86244相关器件

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