是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | MLP |
包装说明: | SMALL OUTLINE, S-PDSO-N5 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 7.95 |
Samacsys Confidence: | 4 | Samacsys Status: | Released |
Samacsys PartID: | 1177069 | Samacsys Pin Count: | 8 |
Samacsys Part Category: | MOSFET (N-Channel) | Samacsys Package Category: | Other |
Samacsys Footprint Name: | WDFN8 3.3x3.3, 0.65P CASE 511DH ISSUE O | Samacsys Released Date: | 2019-08-11 09:11:13 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 34 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 150 V | 最大漏极电流 (Abs) (ID): | 19 A |
最大漏极电流 (ID): | 4.6 A | 最大漏源导通电阻: | 0.051 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | S-PDSO-N5 |
JESD-609代码: | e4 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 5 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | SQUARE |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 40 W |
最大脉冲漏极电流 (IDM): | 20 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) | 端子形式: | NO LEAD |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDMC86244 | FAIRCHILD |
获取价格 |
N-Channel Power Trench® MOSFET 150 V, 9.4 A, |
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FDMC86244 | ONSEMI |
获取价格 |
N 沟道,Power Trench® MOSFET,150V,9.4A,134mΩ |
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FDMC86248 | FAIRCHILD |
获取价格 |
N-Channel Power Trench® MOSFET 150 V, 13 A, |
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FDMC86248 | ONSEMI |
获取价格 |
N 沟道 Power Trench® MOSFET 150V,13A,90mΩ |
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FDMC86259P | ONSEMI |
获取价格 |
P 沟道,PowerTrench® MOSFET,-150V,-13A,107mΩ |
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FDMC86260 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 5.4A I(D), 150V, 0.034ohm, 1-Element, N-Channel, Silicon, M |
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FDMC86260 | ONSEMI |
获取价格 |
N 沟道,Power Trench® MOSFET,150V,25A,34mΩ |
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FDMC86260ET150 | ONSEMI |
获取价格 |
150 V N 沟道 Power Trench® MOSFET |
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FDMC86261P | FAIRCHILD |
获取价格 |
P-Channel PowerTrench MOSFET -150 V, -9 A, 160 m |
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FDMC86261P | ONSEMI |
获取价格 |
P 沟道,Power Trench® MOSFET,-150V,-9A,160mΩ |
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