是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, S-PDSO-N5 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
Factory Lead Time: | 26 weeks | 风险等级: | 0.96 |
雪崩能效等级(Eas): | 34 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 150 V |
最大漏极电流 (Abs) (ID): | 19 A | 最大漏极电流 (ID): | 4.6 A |
最大漏源导通电阻: | 0.051 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | S-PDSO-N5 | JESD-609代码: | e4 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 5 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | SQUARE | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 40 W | 最大脉冲漏极电流 (IDM): | 20 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
端子形式: | NO LEAD | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDMC86244 | FAIRCHILD |
获取价格 |
N-Channel Power Trench® MOSFET 150 V, 9.4 A, |
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FDMC86244 | ONSEMI |
获取价格 |
N 沟道,Power Trench® MOSFET,150V,9.4A,134mΩ |
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FDMC86248 | FAIRCHILD |
获取价格 |
N-Channel Power Trench® MOSFET 150 V, 13 A, |
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FDMC86248 | ONSEMI |
获取价格 |
N 沟道 Power Trench® MOSFET 150V,13A,90mΩ |
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FDMC86259P | ONSEMI |
获取价格 |
P 沟道,PowerTrench® MOSFET,-150V,-13A,107mΩ |
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FDMC86260 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 5.4A I(D), 150V, 0.034ohm, 1-Element, N-Channel, Silicon, M |
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FDMC86260 | ONSEMI |
获取价格 |
N 沟道,Power Trench® MOSFET,150V,25A,34mΩ |
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FDMC86260ET150 | ONSEMI |
获取价格 |
150 V N 沟道 Power Trench® MOSFET |
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FDMC86261P | FAIRCHILD |
获取价格 |
P-Channel PowerTrench MOSFET -150 V, -9 A, 160 m |
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FDMC86261P | ONSEMI |
获取价格 |
P 沟道,Power Trench® MOSFET,-150V,-9A,160mΩ |
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