Datasheet > FDMC86183

FDMC86183

更新时间： 2023-09-03 20:37:45

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	398K
描述
N 沟道，屏蔽门极，PowerTrench® MOSFET，100V，47 A，12.8 mΩ

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FDMC86183 数据手册

DATA SHEET

www.onsemi.com

MOSFET – N-Channel,

Shielded Gate,

POWERTRENCH⁾

MAX

I MAX

DS(ON)

100 V

12.8 mW @ 10 V

34.6 mW @ 6 V

47 A

100 V, 47 A, 12.8 mW

FDMC86183

General Description

This N−Channel MV MOSFET is produced using onsemi’s

advanced POWERTRENCH process that incorporates Shielded Gate

technology. This process has been optimized to minimise on−state

resistance and yet maintain superior switching performance with best

in class soft body diode.

N-CHANNEL MOSFET

Pin 1

Features

Pin 1

• Shielded Gate MOSFET Technology

• Max R

= 12.8 mW at V = 10 V, I = 16 A

GS D

DS(on)

= 34.6 mW at V = 6 V, I = 8 A

DS(on)

• 50% Lower Q than Other MOSFET Suppliers

Top

Bottom

• Lowers Switching Noise/EMI

• MSL1 Robust Package Design

• 100% UIL Tested

PQFN8 3.3 y 3.3, 0.65P

(Power 33)

CASE 483AX

• Pb−Free, Halide Free and RoHS Compliant

MARKING DIAGRAM

Applications

• Primary DC−DC MOSFET

• Synchronous Rectifier in DC−DC and AC−DC

• Motor Drive

&Z&3&K

FDMC

86183

• Solar

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

= Assembly Plant Code

= Numeric Date Code

= Lot Code

Symbol

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current:

Value

100

Unit

FDMC86183

= Specific Device Code

ORDERING INFORMATION

Continuous, T = 25°C (Note 5)

9.7

189

Continuous, T = 100°C (Note 5)

†

Continuous, T = 25°C (Note 1a)

Device

FDMC86183

Package

Shipping

3000 /

Tape & Reel

Pulsed (Note 4)

PQFN8

(Pb−Free,

Halide Free)

Single Pulse Avalanche Energy

(Note 3)

Power Dissipation:

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

= 25°C

2.3

T = 25°C (Note 1a)

T , T

Operating and Storage Junction

Temperature Range

−55 to +150

°C

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

Publication Order Number:

July, 2023 − Rev. 2

FDMC86183/D

12 3 4 5 6 7 8

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与FDMC86183相关器件

型号	品牌	获取价格	描述	数据表
FDMC86184	ONSEMI	获取价格	N 沟道屏蔽门极 PowerTrench® MOSFET 100 V，53 A，8.5 m
FDMC8622	FAIRCHILD	获取价格	N-Channel Power TrenchÂ® MOSFET 100 V, 16 A,
FDMC8622	ONSEMI	获取价格	N 沟道，屏蔽门极，PowerTrench® MOSFET，100 V，16A，56mΩ
FDMC86240	FAIRCHILD	获取价格	N-Channel Power TrenchÂ® MOSFET
FDMC86240	ONSEMI	获取价格	N 沟道，Power Trench® MOSFET，150V，16A，51mΩ
FDMC86244	FAIRCHILD	获取价格	N-Channel Power TrenchÂ® MOSFET 150 V, 9.4 A,
FDMC86244	ONSEMI	获取价格	N 沟道，Power Trench® MOSFET，150V，9.4A，134mΩ
FDMC86248	FAIRCHILD	获取价格	N-Channel Power TrenchÂ® MOSFET 150 V, 13 A,
FDMC86248	ONSEMI	获取价格	N 沟道 Power Trench® MOSFET 150V，13A，90mΩ
FDMC86259P	ONSEMI	获取价格	P 沟道，PowerTrench® MOSFET，-150V，-13A，107mΩ

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