Datasheet > FDMC86248

FDMC86248

更新时间： 2024-09-09 11:14:59

品牌	Logo	应用领域
安森美 - ONSEMI		开关脉冲光电二极管晶体管
页数	文件大小	规格书
7页	412K
描述
N 沟道 Power Trench® MOSFET 150V，13A，90mΩ

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FDMC86248 数据手册

DATA SHEET

www.onsemi.com

MOSFET – N-Channel,

POWERTRENCH⁾

MAX

I MAX

DS(ON)

150 V

90 mW @ 10 V

125 mW @ 6 V

13 A

150 V, 13 A, 90 mW

Pin 1

FDMC86248

General Description

This N−Channel MOSFET is produced using onsemi‘s advanced

POWERTRENCH process that has been especially tailored

to minimize the on−state resistance and yet maintain superior

switching performance.

Top

Bottom

PQFN8 3.3 y 3.3, 0.65P

CASE 483AK

Features

• Max R

= 90 mW at V = 10 V, I = 3.4 A

GS D

DS(on)

= 125 mW at V = 6 V, I = 2.9 A

DS(on)

• Advanced Package and Silicon Combination for Low R

and High Efficiency

DS(on)

• 100% UIL Tested

• Pb−Free, Halide Free and RoHS Compliant

Applications

• Primary MOSFET

• MV Synchronous Rectifier

N-CHANNEL MOSFET

MARKING DIAGRAM

MAXIMUM RATINGS (T = 25°C unless otherwise noted.)

Symbol

Parameter

Drain to Source Voltage

Value

Unit

150

ZXYYKK

FDMC

Gate to Source Voltage

86248

Drain Current

– Continuous

– Continuous (Note 1a)

– Pulsed

= 25°C

3.4

T = 25°C

XYY

= Assembly Plant Code

Single Pulse Avalanche Energy (Note 3)

= 3−Digit Date Code Format

= 2−Alphanumeric Lot Run Traceability

Code

Power Dissipation

Power Dissipation (Note 1a) T = 25°C

= 25°C

2.3

FDMC86248 = Specific Device Code

T , T

Operating and Storage Junction

Temperature Range

–55 to

+150

°C

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

†

Device

Package

Shipping

THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted.)

FDMC86248

PQFN8

(Pb−Free,

Halide Free)

3000 /

Tape & Reel

Symbol

Parameter

Value

Unit

Thermal Resistance,

Junction to Case

3.4

°C/W

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Thermal Resistance,

Junction to Ambient (Note 1a)

°C/W

Publication Order Number:

February, 2023 − Rev. 3

FDMC86248/D

12 3 4 5 6 7

中文翻译

下载PDF

与FDMC86248相关器件

型号	品牌	获取价格	描述	数据表
FDMC86259P	ONSEMI	获取价格	P 沟道，PowerTrench® MOSFET，-150V，-13A，107mΩ
FDMC86260	FAIRCHILD	获取价格	Power Field-Effect Transistor, 5.4A I(D), 150V, 0.034ohm, 1-Element, N-Channel, Silicon, M
FDMC86260	ONSEMI	获取价格	N 沟道，Power Trench® MOSFET，150V，25A，34mΩ
FDMC86260ET150	ONSEMI	获取价格	150 V N 沟道 Power Trench® MOSFET
FDMC86261P	FAIRCHILD	获取价格	P-Channel PowerTrench MOSFET -150 V, -9 A, 160 m
FDMC86261P	ONSEMI	获取价格	P 沟道，Power Trench® MOSFET，-150V，-9A，160mΩ
FDMC86262P	ONSEMI	获取价格	P 沟道 PowerTrench® MOSFET -150 V，-2 A，307 mΩ
FDMC86265P	ONSEMI	获取价格	P 沟道，PowerTrench® MOSFET，-150V，-2.6A，1.2Ω
FDMC86320	FAIRCHILD	获取价格	Power Field-Effect Transistor, 10.7A I(D), 80V, 0.0117ohm, 1-Element, N-Channel, Silicon,
FDMC86320	ONSEMI	获取价格	N 沟道，Power Trench® MOSFET，80V，22A，11.7mΩ

与FDMC86248相关文章

SL74HC10N：高性能三输入与非门解析
2024-09-03

56
AIC1781A 电池充电控制器深度解析
2024-09-03

48
Pickering新高压舌簧继电器亮相汽车测试博览会
2024-08-26

81
采用MCU+MPU双处理器架构实现的创新应用设计探索
2024-08-23

92

产品中心

服务支持

精选活动

关于我们

帮助中心

FDMC86248

FDMC86248 数据手册

与FDMC86248相关器件

与FDMC86248相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FDMC86248

FDMC86248 数据手册

与FDMC86248相关器件

与FDMC86248相关文章

您还可以找

您在本页遇到什么问题？