Datasheet > FDMC86106LZ_13

FDMC86106LZ_13

更新时间： 2024-11-18 12:04:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		栅极
页数	文件大小	规格书
7页	278K
描述
N-Channel Shielded Gate PowerTrench MOSFET 100 V, 7.5 A, 103 mÎ©

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FDMC86106LZ_13 数据手册

June 2013

FDMC86106LZ

N-Channel Shielded Gate PowerTrench^®MOSFET

100 V, 7.5 A, 103 mΩ

Features

General Description

Shielded Gate MOSFET Technology

Max r_DS(on)= 103 mΩ at V_GS= 10 V, I_D= 3.3 A

Max r_DS(on)= 153 mΩ at V_GS= 4.5 V, I_D= 2.7 A

HBM ESD protection level > 3 KV typical (Note 4)

100% UIL Tested

This N-Channel logic Level MOSFETs are produced using

Fairchild Semiconductor‘s advanced PowerTrench^®process

that incorporates Shielded Gate technology. This process has

been optimized for the on-state resistance and yet maintain

superior switching performance. G-S zener has been added to

enhance ESD voltage level.

RoHS Compliant

Application

DC - DC Conversion

Bottom

D D

Top

G S

MLP 3.3x3.3

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

100

±20

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25 °C

_C= 25 °C

7.5

9.6

I_D

T_A= 25 °C

(Note 1a)

(Note 3)

3.3

-Pulsed

E_AS

Single Pulse Avalanche Energy

Power Dissipation

T_C= 25 °C

T_A= 25 °C

P_D

Power Dissipation

(Note 1a)

2.3

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

6.5

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13 ’’

Tape Width

12 mm

Quantity

FDMC86106Z

FDMC86106LZ

Power 33

3000 units

FDMC86106LZ Rev.C1

www.fairchildsemi.com

12 3 4 5 6 7

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