是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, S-PDSO-N5 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
Factory Lead Time: | 26 weeks | 风险等级: | 0.96 |
雪崩能效等级(Eas): | 6 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 150 V |
最大漏极电流 (Abs) (ID): | 1.8 A | 最大漏极电流 (ID): | 1 A |
最大漏源导通电阻: | 1.2 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | S-PDSO-N5 | JESD-609代码: | e4 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 5 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | SQUARE | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 2.3 W | 最大脉冲漏极电流 (IDM): | 2 A |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 端子形式: | NO LEAD |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDMC86320 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 10.7A I(D), 80V, 0.0117ohm, 1-Element, N-Channel, Silicon, |
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FDMC86320 | ONSEMI |
获取价格 |
N 沟道,Power Trench® MOSFET,80V,22A,11.7mΩ |
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FDMC86324 | FAIRCHILD |
获取价格 |
N-Channel Power Trench MOSFET 80 V, 20 A, 23 milliohm |
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FDMC86324 | ONSEMI |
获取价格 |
N 沟道,Power Trench® MOSFET,80V,20A,23mΩ |
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FDMC86340 | FAIRCHILD |
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N-Channel Shielded Gate Power Trench MOSFET 8 |
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FDMC86340 | ONSEMI |
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N 沟道屏蔽门极 Power Trench® MOSFET 80V,48A,6.5mΩ |
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FDMC86340ET80 | ONSEMI |
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N 沟道,屏蔽门极,PowerTrench® MOSFET,80V,68A,6.5mΩ |
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FDMC8651 | ONSEMI |
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N 沟道 Power Trench® MOSFET 30V,20A,6.1mΩ |
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FDMC8651 | FAIRCHILD |
获取价格 |
N-Channel Power Trench㈢ MOSFET 30 V, 20 A, 6. |
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FDMC86520DC | FAIRCHILD |
获取价格 |
N-Channel Dual CoolTM PowerTrench® MOSFET 60 |
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