Datasheet > FDMC8884_12

FDMC8884_12

更新时间： 2024-09-14 11:59:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	358K
描述
N-Channel Power TrenchÂ® MOSFET 30 V, 15 A, 19 mÎ©

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FDMC8884_12 数据手册

April 2012

FDMC8884

N-Channel Power Trench^®MOSFET

30 V, 15 A, 19 mΩ

Features

General Description

Max r_DS(on)= 19 mΩ at V_GS= 10 V, I_D= 9.0 A

Max r_DS(on)= 30 mΩ at V_GS= 4.5 V, I_D= 7.2 A

High performance technology for extremely low r_DS(on)

Termination is Lead-free and RoHS Compliant

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced Power Trench^®process that has

been especially tailored to minimize the on-state resistance. This

device is well suited for Power Management and load switching

applications common in Notebook Computers and Portable

Battery Packs.

Application

High side in DC - DC Buck Converters

Notebook battery power management

Load switch in Notebook

Bottom

Top

Pin 1

MLP 3.3x3.3

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

±20

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25 °C

_C= 25 °C

I_D

T_A= 25 °C

(Note 1a)

(Note 3)

9.0

-Pulsed

E_AS

Single Pulse Avalanche Energy

Power Dissipation

T_C= 25 °C

T_A= 25 °C

P_D

Power Dissipation

(Note 1a)

2.3

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

6.6

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13 ’’

Tape Width

12 mm

Quantity

FDMC8884

MLP 3.3x3.3

3000 units

FDMC8884 Rev.E3

www.fairchildsemi.com

12 3 4 5 6 7

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