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FDMD8630 PDF预览

FDMD8630

更新时间: 2024-09-16 11:16:15
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 411K
描述
双 N 沟道,PowerTrench® MOSFET,30 V, 167 A,1.0 mΩ

FDMD8630 数据手册

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FDMD8630  
MOSFET – N-Channel,  
POWERTRENCH), Dual  
30 V, 167 A, 1.0 mW  
General Description  
www.onsemi.com  
This package integrates two NChannel devices connected  
internally in commonsource configuration. This enables very low  
package parasitics and optimized thermal path to the common source  
pad on the bottom. Provides a very small footprint (5 x 6 mm) for  
higher power density.  
Top  
Bottom  
Pin 1  
G1  
D1  
D1  
D1  
Features  
S1 / S2  
Common Source Configuration to Eliminate PCB Routing  
Large Source Pad on Bottom of Package for Enhanced Thermals  
D2  
D2  
D2  
G2  
Max r  
Max r  
= 1.0 mW at V = 10 V, I = 38 A  
GS D  
DS(on)  
PQFN8 5X6, 1.27P  
CASE 483AS  
= 1.3 mW at V = 4.5 V, I = 33 A  
DS(on)  
GS  
D
Ideal for Flexible Layout in Secondary Side Synchronous  
Rectification  
100% UIL Tested  
This Device is PbFree and is RoHS Compliant  
MARKING DIAGRAM  
$Y&Z&3&K  
FDMD  
Applications  
Isolated DCDC Synchronous Rectifiers  
Common Ground Load Switches  
8630  
&Y  
&Z  
&3  
&K  
= ON Semiconductor Logo  
= Assembly Plant Code  
= Numeric Date Code  
= Lot Code  
FDMD8630  
= Specific Device Code  
PIN CONFIGURATION  
1
2
3
4
D2  
D2  
G1  
D1  
8
7
6
5
D2  
G2  
D1  
D1  
S1,S2to backside  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
July, 2019 Rev. 2  
FDMS3604S/D  

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