Datasheet > FDMD8240LET40

FDMD8240LET40

更新时间： 2024-09-15 11:12:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	349K
描述
双 N 沟道，PowerTrench® MOSFET，40V，103A，2.6mΩ

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FDMD8240LET40 数据手册

DATA SHEET

www.onsemi.com

MOSFET – Dual, N-Channel

POWERTRENCH⁾

PQFN12 3.3X5, 0.65P

CASE 483BN

40 V, 103 A, 2.6 mW

FDMD8240LET40

Description

This Device Includes Two 40V N−Channel MOSFETs in a Dual

Power (3.3 mm x 5 mm) package. HS source and LS Drain are

internally connected for half/full bridge, low source inductance

G1R

D2/S1

package, low R

/Qg FOM silicon.

D2/S1

DS(on)

Features

D2/S1

• Extended T Rating to 175°C

• Max R

= 2.6 m ꢀ at V = 10 V, I = 23 A

GS D

DS(on)

= 3.95 m ꢀ at V = 4.5 V, I = 19 A

DS(on)

MARKING DIAGRAM

• Ideal for Flexible Layout in Primary Side of Bridge Topology

• 100% UIL Tested

Y$ZYWWKK

FDMD

8240LET

• Kelvin High Side MOSFET Drive Pin−out Capability

• These Device is Pb−Free, Halide Free, and is RoHS Compliant

= onsemi Logo

Typical Applications

= Assembly Plant Code

= Date Code (Year & Week)

= Lot Traceability Code

= Specific Device Code

• Synchronous Buck : Primary Switch of Half / Full Bridge Converter

for Telecom

• Motor Bridge : Primary Switch of Half / Full bridge Converter for

BLDC Motor

YWW

FDMD8240LET

ORDERING INFORMATION

• MV POL : Synchronous Buck Switch

†

Device

Shipping

Package

MOSFET MAXIMUM RATINGS T = 25°C unless otherwise noted

FDMD8240LET40

PQFN12

3000 /

(Pb−Free)

Tape & Reel

Symbol

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Value

Unit

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

− Continuous T = 25°C (Note 5)

103

489

− Continuous T = 100°C (Note 5)

− Continuous T = 25°C (Note 1 a)

− Pulsed (Note 4)

Single Pulse Avalanche Energy (Note 3)

216

Power Dissipation T = 25°C

Power Dissipation T = 25°C (Note 1 a)

2.5

T , T

Operating and Storage Junction

Temperature Range

−55 to +175

°C

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

Publication Order Number:

May, 2023 − Rev 2

FDMD8240LET40/D

12 3 4 5 6 7 8

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与FDMD8240LET40相关器件

型号	品牌	获取价格	描述	数据表
FDMD8260L	ONSEMI	获取价格	60 V 双 N 沟道 PowerTrench® MOSFET
FDMD8260LET60	ONSEMI	获取价格	双 N 沟道 Power Trench® MOSFET 60V，5.8mΩ
FDMD84100	ONSEMI	获取价格	双 N 沟道，PowerTrench® MOSFET，100V，21A，20mΩ
FDMD8430	ONSEMI	获取价格	Dual N-Channel PowerTrench® MOSFET, 30V, 28A,
FDMD8440L	ONSEMI	获取价格	Dual N-Channel PowerTrench® MOSFET 40V, 87A,
FDMD85100	ONSEMI	获取价格	双 N 沟道，PowerTrench® MOSFET，100V，48A，9.9mΩ
FDMD8530	ONSEMI	获取价格	双 N 沟道，PowerTrench® MOSFET，30V，201A，1.25mΩ
FDMD8540L	ONSEMI	获取价格	双 N 沟道 PowerTrench® MOSFET 40V，156A，1.5mΩ
FDMD8560L	ONSEMI	获取价格	N 沟道 Power Trench® MOSFET 60V，22A，3.2mΩ
FDMD8580	ONSEMI	获取价格	双 N 沟道 PowerTrench® MOSFET 80 V，82A，4.6 mΩ

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