Datasheet > FDMD8540L

FDMD8540L

更新时间： 2024-09-16 11:15:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
11页	672K
描述
双 N 沟道 PowerTrench® MOSFET 40V，156A，1.5mΩ

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中文翻译

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数据手册

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FDMD8540L 数据手册

MOSFET – Dual, N-Channel,

POWERTRENCH⁾

Q1: 40 V, 156 A, 1.5 mW

Q2: 40 V, 156 A, 1.5 mW

FDMD8540L

www.onsemi.com

General Description

This device includes two 40 V N−Channel MOSFETs in a dual

Power (5 mm x 6 mm) package. HS source and LS drain internally

connected for half/full bridge, low source inductance package, low

MAX

I MAX

DS(ON)

40 V

1.5 mW @ 10 V

2.2 mW @ 4.5 V

156 A

/Qg FOM silicon.

DS(on)

Features

Q1: N−Channel

D2/S1

• Max r

DS(on)

Q2: N−Channel

= 1.5 mW at V = 10 V, I = 33 A

GS D

DS(on)

Pin 1

• Max r

= 2.2 mW at V = 4.5 V, I = 26 A

GS D

• Max r

= 1.5 mW at V = 10 V, I = 33 A

GS D

DS(on)

• Max r

= 2.2 mW at V = 4.5 V, I = 26 A

GS D

DS(on)

Pin 1

Bottom

Top

• Ideal for Flexible Layout in Primary Side of Bridge Topology

• 100% UIL Tested

• Kelvin High Side MOSFET Drive Pin−out Capability

• This Device is Pb−Free and are RoHS Compliant

PQFN8 5X6, 1.27P

Power 5 x 6

CASE 483AT

Applications

MARKING DIAGRAM

• POL Synchronous Dual

$Y&Z&3&K

FDMD

8540L

• One Phase Motor Half Bridge

• Half/Full Bridge Secondary Synchronous Rectification

FDMD8540L = Specific Device Code

= ON Semiconductor Logo

= Assembly Plant Code

= 3−Digit Date Code Format

= 2−Digits Lot Run Traceability Data

D2/S1

ORDERING INFORMATION

See detailed ordering and shipping information on page 9 of

this data sheet.

Publication Order Number:

April, 2021 − Rev. 2

FDMD8540L/D

12 3 4 5 6 7...11

中文翻译

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