Datasheet > FDMC89521L

FDMC89521L

更新时间： 2024-09-15 11:13:31

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	266K
描述
双 N 沟道，Power Trench® MOSFET，60V，8.2A，17mΩ

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中文翻译

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FDMC89521L 数据手册

DATA SHEET

www.onsemi.com

MOSFET – Dual N-Channel,

POWERTRENCH⁾

Pin 1

G1 S1 S1 S1

60 V, 8.2 A, 17 mW

FDMC89521L

S2 S2

G2 S2

General Description

Power 33

This device includes two 60 V N−Channel MOSFETs in a dual

Power 33 (3 mm x 3 mm MLP) package. The package is enhanced for

exceptional thermal performance.

WDFN8 3x3, 0.65P

CASE 511DG

Features

MARKING DIAGRAM

• Max r

= 17 mW at V = 10 V, I = 8.2 A

GS D

DS(on)

= 27 mW at V = 4.5 V, I = 6.7 A

$Y&Z&2&K

FDMC

89521L

• Termination is Lead−free

• These Devices are RoHS Compliant

Applications

• Battery Protection

• Load Switching

• Bridge Topologies

= onsemi Logo

= Assembly Plant Code

= Numeric Date Code

= Lot Code

FDMC89521L

= Specific Device Code

MOSFET MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Symbol

VDS

Parameter

Drain to Source Voltage

Ratings Units

PIN ASSIGNMENT

VGS

Gate to Source Voltage

I_D

Drain Current

− Continuous

− Pulsed

T_A= 25°C

(Note 1a)

(Note 3)

8.2

EAS

P_D

Single Pulse Avalanche Energy

Power Dissipation T_C= 25°C

Power Dissipation T_A= 25°C

(Note 1a)

1.9

TJ, TSTG Operating and Storage Junction Temperature

Range

−55 to

+150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

N−Channel MOSFET

ORDERING INFORMATION

See detailed ordering and shipping information on page 6 of

this data sheet.

THERMAL CHARACTERISTICS

Symbol

RθJC

Parameter

Ratings

8.0

Unit

°C/W

Thermal Resistance, Junction−to−Case

RθJA

Thermal Resistance, Junction−to−Ambient

(Note 1a)

RθJA

Thermal Resistance, Junction−to−Ambient

(Note 1b)

155

°C/W

Publication Order Number:

February, 2023 − Rev. 2

FDMC89521L/D

12 3 4 5 6 7 8

中文翻译

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