Datasheet > FDMC8676_07

FDMC8676_07

更新时间： 2024-09-14 10:32:19

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	301K
描述
N-Channel PowerTrench MOSFET

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中文翻译

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数据手册

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FDMC8676_07 数据手册

December 2007

FDMC8676

N-Channel PowerTrench^®MOSFET

30V, 18A, 5.9mΩ

Features

General Description

Max r_DS(on)= 5.9mΩ at V_GS= 10V, I_D= 14.7A

Max r_DS(on)= 9.3mΩ at V_GS= 4.5V, I_D= 11.5A

Low Profile - 1mm max in Power 33

RoHS Compliant

This device has been designed specifically to improve the

efficiency of DC/DC converters. Using new techniques in

MOSFET construction, the various components of gate charge

and capacitance have been optimized to reduce switching

losses. Low gate resistance and very low Miller charge enable

excellent performance with both adaptive and fixed dead time

gate drive circuits. Very low r_DS(on)has been maintained to

provide an extremely versatile device.

Applications

High efficiency DC-DC converter

Notebook DC-DC conversion

Multi purpose point of load

Top

Bottom

Pin 1

Power 33

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

±20

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25°C

T_A= 25°C

I_D

(Note 1a)

-Pulsed

Power Dissipation

T_C= 25°C

T_A= 25°C

P_D

Power Dissipation

(Note 1a)

(Note 3)

2.3

E_AS

Single Pulse Avalanche Energy

216

°C

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13’’

Tape Width

12mm

Quantity

FDMC8676

Power 33

3000units

FDMC8676 Rev.C

www.fairchildsemi.com

12 3 4 5 6 7

中文翻译

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