Datasheet > FDMC8878_12

FDMC8878_12

更新时间： 2024-09-14 12:51:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	953K
描述
N-Channel Power TrenchÂ® MOSFET 30V, 16.5A, 14m

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数据手册

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FDMC8878_12 数据手册

July 2012

FDMC8878

N-Channel Power Trench^®MOSFETꢀ

30V, 16.5A, 14mꢁ

Features

General Description

Max r_DS(on)= 14mꢁ at V_GS= 10V, I_D= 9.6A

This N-Channel MOSFET is

Fairchild Semiconductor‘s

process. It has been optimized for power management

applications.

rugged gate version of

advanced

Power

Trench

Max r_DS(on)= 17mꢁ at V_GS= 4.5V, I_D= 8.7A

Low Profile - 0.8 mm max in

RoHS Compliant

MLP 3.3X3.3

Application

DC - DC Conversion

Bottom

D D

Top

G S

Pin 1

MLP 3.3x3.3

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

-Pulsed

Power Dissipation

T_C= 25°C

T_A= 25°C

16.5

9.6

I_D

(Note 1a)

T_C= 25°C

T_A= 25°C

P_D

Power Dissipation

2.1

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_ꢂJC

R_ꢂJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

FDMC8878

Device

FDMC8878

Package

MLP 3.3X3.3

Reel Size

13 ”

Tape Width

12 mm

Quantity

3000 units

FDMC8878 Rev.D4

www.fairchildsemi.com

12 3 4 5 6 7

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