Datasheet > FDMC8884

FDMC8884

更新时间： 2024-09-14 03:36:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	296K
描述
N-Channel Power Trench㈢ MOSFET 30V, 15A, 19mヘ

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数据手册
替代型号

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FDMC8884 数据手册

May 2008

FDMC8884

N-Channel Power Trench^®MOSFET

30V, 15A, 19mΩ

Features

General Description

Max r_DS(on)= 19mΩ at V_GS= 10V, I_D= 9.0A

Max r_DS(on)= 30mΩ at V_GS= 4.5V, I_D= 7.2A

High performance trchnology for extremely low r_DS(on)

Termination is Lead-free and RoHS Compliant

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced Power Trench^®process that has

been especially tailored to minimize the on-state resistance. This

device is well suited for Power Management and load switching

applications common in Notebook Computers and Portable

Battery Packs.

Application

High side in DC - DC Buck Converters

Notebook battery power management

Load switch in Notebook

Bottom

Top

Pin 1

Power 33

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

±20

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25°C

_C= 25°C

T_A= 25°C

I_D

(Note 1a)

(Note 3)

9.0

-Pulsed

E_AS

Single Pulse Avalanche Energy

Power Dissipation

T_C= 25°C

T_A= 25°C

P_D

Power Dissipation

(Note 1a)

2.3

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

6.6

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13’’

Tape Width

12mm

Quantity

FDMC8884

Power 33

3000 units

FDMC8884 Rev.C

www.fairchildsemi.com

12 3 4 5 6 7

中文翻译

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FDMC8884 替代型号

型号	品牌	替代类型	描述	数据表
FDMC8882	FAIRCHILD	类似代替	N-Channel Power Trench® MOSFET 30 V, 16 A, 14
FDMC8878	FAIRCHILD	功能相似	N-Channel Power Trench MOSFET 30V, 16.5A, 14mohm

与FDMC8884相关器件

型号	品牌	获取价格	描述	数据表
FDMC8884_12	FAIRCHILD	获取价格	N-Channel Power TrenchÂ® MOSFET 30 V, 15 A, 1
FDMC89521L	FAIRCHILD	获取价格	Dual N-Channel PowerTrenchÂ® MOSFET 60 V, 8.2
FDMC89521L	ONSEMI	获取价格	双 N 沟道，Power Trench® MOSFET，60V，8.2A，17mΩ
FDMC9430L-F085	ONSEMI	获取价格	双 N 沟道，逻辑电平，PowerTrench® MOSFET，40V，12A，8.2mΩ
FDMD82100	ONSEMI	获取价格	双 N 沟道 Power Trench® MOSFET 100V，25A，19mΩ
FDMD82100L	ONSEMI	获取价格	双 N 沟道，PowerTrench® MOSFET，100V，24A，19.5mΩ
FDMD8240L	ONSEMI	获取价格	双 N 沟道 Power Trench® MOSFET 40V，98A，2.6mΩ
FDMD8240LET40	ONSEMI	获取价格	双 N 沟道，PowerTrench® MOSFET，40V，103A，2.6mΩ
FDMD8260L	ONSEMI	获取价格	60 V 双 N 沟道 PowerTrench® MOSFET
FDMD8260LET60	ONSEMI	获取价格	双 N 沟道 Power Trench® MOSFET 60V，5.8mΩ