Datasheet > FDMC8854-SN00137

FDMC8854-SN00137

更新时间： 2024-09-14 14:50:15

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	199K
描述
Transistor

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技术参数
数据手册

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FDMC8854-SN00137 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

FDMC8854-SN00137 数据手册

February 2007

FDMC8854

N-Channel Power Trench^®MOSFET

30V, 15A, 5.7mΩ

Features

General Description

Max r_DS(on)= 5.7mΩ at V_GS= 10V, I_D= 15A

Max r_DS(on)= 7.6mΩ at V_GS= 4.5V, I_D= 13A

Low Profile - 1mm max in Power 33

RoHS Compliant

This N-Channel MOSFET is

rugged gate version of

Fairchild Semiconductor‘s

advanced Power Trench

process. It has been optimized for power management

applications.

Application

DC - DC Conversion

Bottom

Top

Power 33

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

±20

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25°C

_C= 25°C

I_D

T_A= 25°C

(Note 1a)

-Pulsed

Power Dissipation

T_C= 25°C

T_A= 25°C

P_D

Power Dissipation

2.0

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

7’’

Tape Width

8mm

Quantity

FDMC8854

Power 33

3000 units

FDMC8854 Rev.C

www.fairchildsemi.com

12 3 4 5 6 7

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