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FDMC8878 PDF预览

FDMC8878

更新时间: 2024-09-15 11:14:47
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
7页 248K
描述
N 沟道,PowerTrench® MOSFET,30V,16.5A,14mΩ

FDMC8878 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:MLP, 8 PINReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:1 week风险等级:1
Samacsys Description:MOSFET N-Channel 30V 9.6A Power 33 Fairchild FDMC8878 N-channel MOSFET Transistor, 9.6 A, 30 V, 8-Pin Power 33外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):38 A最大漏极电流 (ID):9.6 A
最大漏源导通电阻:0.014 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:S-PDSO-N5JESD-609代码:e4
湿度敏感等级:1元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):31 W最大脉冲漏极电流 (IDM):60 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON

FDMC8878 数据手册

 浏览型号FDMC8878的Datasheet PDF文件第2页浏览型号FDMC8878的Datasheet PDF文件第3页浏览型号FDMC8878的Datasheet PDF文件第4页浏览型号FDMC8878的Datasheet PDF文件第5页浏览型号FDMC8878的Datasheet PDF文件第6页浏览型号FDMC8878的Datasheet PDF文件第7页 
FDMC8878  
N-Channel  
POWERTRENCH) MOSFET  
30 V, 16.5 A, 14 mW  
This NChannel MOSFET is a rugged gate version of  
ON Semiconductor’s advanced PowerTrench process. It has been  
optimized for power management applications.  
www.onsemi.com  
Features  
D
R  
R  
= 14 m(Max.) @ V = 10 V, I = 9.6 A  
GS D  
DS(on)  
= 17 m(Max.) @ V = 4.5 V, I = 8.7 A  
DS(on)  
GS  
D
Low Profile 0.8 mm Max in MLP 3.3 x 3.3  
These Devices are PbFree and are RoHS Compliant  
G
Application  
DC DC Conversion  
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Parameter  
DraintoSource Voltage  
Symbol  
Value  
30  
Unit  
V
V
DS  
V
GS  
GatetoSource Voltage  
20  
V
Continuous Drain Current  
T
= 25°C  
I
D
16.5  
A
C
(Package limited)  
WDFN8  
CASE 511DH  
T
= 25°C  
38  
C
(Silicon limited)  
T = 25°C  
9.6  
A
(Figure 1)  
Drain Current  
Pulsed  
I
60  
31  
A
D
G
S
D
D
D
D
5
6
7
8
4
Power Dissipation  
T
= 25°C  
P
W
C
D
T = 25°C  
2.1  
A
3
2
1
(Figure 1)  
Operating and Storage Junction Temperature  
Range  
T , T  
55 to  
+150  
°C  
S
S
J
STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL CHARACTERISTICS  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 1 of this data sheet.  
Parameter  
Symbol  
Value  
4
Unit  
Thermal Resistance, JunctiontoCase  
R
°C/W  
JC  
Thermal Resistance, JunctiontoAmbient  
(Figure 1)  
R
60  
JA  
PACKAGE MARKING AND ORDERING INFORMATION  
Part Number  
FDMC8878  
Top Mark  
Package  
Reel Size  
Tape Width  
Quantity  
FDMC8878  
MLP 3.3 x 3.3  
13″  
12 mm  
3000 units  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
October, 2018 Rev. 5  
FDMC8878/D  
 

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