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FDMC86570L PDF预览

FDMC86570L

更新时间: 2024-09-15 11:12:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 529K
描述
N 沟道屏蔽门极 PowerTrench® MOSFET 60 V,84A,4.3mΩ

FDMC86570L 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET – N-Channel,  
Shielded Gate  
POWERTRENCH)  
Pin 1  
Pin 1  
S
S
S
G
D
D
D
D
60 V, 84 A, 4.3 mW  
Top  
Bottom  
FDMC86570L  
WDFN8 3.3x3.3, 0.65P  
CASE 483AW  
General Description  
This NChannel MOSFET is produced using onsemi’s advanced  
POWERTRENCH process that incorporates Shielded Gate  
technology. This process has been optimized for the onstate  
resistance and yet maintain superior switching performance.  
MARKING DIAGRAM  
ON  
ZXYYKK  
Features  
FDMC  
86570L  
Shielded Gate MOSFET Technology  
Max r  
Max r  
= 4.3 mW at V = 10 V, I = 18 A  
GS D  
DS(on)  
= 6.5 mW at V = 4.5 V, I = 15 A  
DS(on)  
GS  
D
Z
X
= Assembly Plant Code  
= Year Code  
= Week Code  
= Lot Code  
= Specific Device Code  
High Performance Technology for Extremely Low r  
These Devices are PbFree and are RoHS Compliant  
DS(on)  
YY  
KK  
FDMC  
Application  
DCDC Conversion  
86570L  
= Specific Device Code  
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
PIN ASSIGNMENT  
Symbol  
VDS  
Parameter  
Drain to Source Voltage  
Ratings Units  
60  
20  
V
V
A
S
S
1
2
8
7
D
D
VGS  
Gate to Source Voltage  
Drain Current  
ID  
Continuous  
Continuous  
Continuous  
Pulsed  
TC = 25°C (Note 5)  
84  
53  
18  
416  
TC = 100°C (Note 5)  
TA = 25°C (Note 1a)  
(Note 4)  
S
3
4
6
5
D
D
G
EAS  
PD  
Single Pulse Avalanche Energy (Note 3)  
253  
54  
mJ  
W
Power Dissipation TC = 25°C  
Power Dissipation TA = 25°C (Note 1a)  
NChannel MOSFET  
2.3  
TJ, TSTG Operating and Storage Junction Temperature  
Range  
55 to  
+150  
°C  
ORDERING INFORMATION  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
See detailed ordering and shipping information on page 6 of  
this data sheet.  
THERMAL CHARACTERISTICS  
Symbol  
Parameter  
Ratings  
Unit  
RθJC  
Thermal Resistance, JunctiontoCase  
(Note 1)  
2.3  
°C/W  
RθJA  
Thermal Resistance, JunctiontoAmbient  
(Note 1a)  
53  
°C/W  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
January, 2023 Rev. 2  
FDMC86570L/D  

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