DATA SHEET
www.onsemi.com
MOSFET – N-Channel,
Shielded Gate
POWERTRENCH)
Pin 1
Pin 1
S
S
S
G
D
D
D
D
60 V, 84 A, 4.3 mW
Top
Bottom
FDMC86570L
WDFN8 3.3x3.3, 0.65P
CASE 483AW
General Description
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that incorporates Shielded Gate
technology. This process has been optimized for the on−state
resistance and yet maintain superior switching performance.
MARKING DIAGRAM
ON
ZXYYKK
Features
FDMC
86570L
• Shielded Gate MOSFET Technology
• Max r
• Max r
= 4.3 mW at V = 10 V, I = 18 A
GS D
DS(on)
= 6.5 mW at V = 4.5 V, I = 15 A
DS(on)
GS
D
Z
X
= Assembly Plant Code
= Year Code
= Week Code
= Lot Code
= Specific Device Code
• High Performance Technology for Extremely Low r
• These Devices are Pb−Free and are RoHS Compliant
DS(on)
YY
KK
FDMC
Application
• DC−DC Conversion
86570L
= Specific Device Code
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
PIN ASSIGNMENT
Symbol
VDS
Parameter
Drain to Source Voltage
Ratings Units
60
20
V
V
A
S
S
1
2
8
7
D
D
VGS
Gate to Source Voltage
Drain Current
ID
−Continuous
−Continuous
−Continuous
−Pulsed
TC = 25°C (Note 5)
84
53
18
416
TC = 100°C (Note 5)
TA = 25°C (Note 1a)
(Note 4)
S
3
4
6
5
D
D
G
EAS
PD
Single Pulse Avalanche Energy (Note 3)
253
54
mJ
W
Power Dissipation TC = 25°C
Power Dissipation TA = 25°C (Note 1a)
N−Channel MOSFET
2.3
TJ, TSTG Operating and Storage Junction Temperature
Range
−55 to
+150
°C
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
See detailed ordering and shipping information on page 6 of
this data sheet.
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
RθJC
Thermal Resistance, Junction−to−Case
(Note 1)
2.3
°C/W
RθJA
Thermal Resistance, Junction−to−Ambient
(Note 1a)
53
°C/W
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
January, 2023 − Rev. 2
FDMC86570L/D