5秒后页面跳转
FDMC86520L PDF预览

FDMC86520L

更新时间: 2024-09-15 11:15:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 225K
描述
60V N 沟道 PowerTrench® MOSFET

FDMC86520L 数据手册

 浏览型号FDMC86520L的Datasheet PDF文件第2页浏览型号FDMC86520L的Datasheet PDF文件第3页浏览型号FDMC86520L的Datasheet PDF文件第4页浏览型号FDMC86520L的Datasheet PDF文件第5页浏览型号FDMC86520L的Datasheet PDF文件第6页浏览型号FDMC86520L的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
MOSFET – N-Channel,  
POWERTRENCH)  
60 V, 22 A, 7.9 mW  
V
r
MAX  
I MAX  
D
DS  
DS(on)  
60 V  
7.9 mW @ 10 V  
22 A  
11.7 mW @ 4.5 V  
FDMC86520L  
Pin 1  
G
General Description  
S
S
S
This NChannel MOSFET has been designed specifically to  
improve the overall efficiency and to minimize switch node ringing  
of DC/DC converters using either synchronous or conventional  
switching PWM controllers. It has been optimized for low gate charge,  
D
D
D
D
low r  
performance.  
, fast switching speed and body diode reverse recovery  
DS(on)  
Bottom  
Top  
WDFN8 3.3x3.3, 0.65P  
CASE 511DH  
Features  
Max r  
= 7.9 mW at V = 10 V, I = 13.5 A  
GS D  
DS(on)  
Max r  
= 11.7 mW at V = 4.5 V, I = 11.5 A  
GS D  
DS(on)  
MARKING DIAGRAM  
Low Profile 1 mm Max in Power 33  
100% UIL Tested  
This Device is PbFree, Halide Free and RoHS Compliant  
&Z&2&K  
FDMC  
86520L  
Applications  
Primary Switch in Isolated DCDC  
Synchronous Rectifier  
Load Switch  
&Z  
&2  
= Assembly Plant Code  
= 2Digit Date Code  
(Year and Week)  
&K  
= 2Digit Lot Run Code  
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
FDMC86520L = Specific Device Code  
Symbol  
Parameter  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current Continuous  
Rating  
60  
Unit  
V
V
DS  
V
GS  
PIN ASSIGNMENT  
20  
V
I
D
T
C
= 25°C  
22  
A
D
D
5
6
4
3
G
S
Continuous T = 25°C  
13.5  
A
(Note 1a)  
Pulsed  
60  
D
D
7
8
2
1
S
S
E
Single Pulse Avalanche Energy (Note 3)  
79  
40  
mJ  
W
AS  
P
Power Dissipation  
T = 25°C  
C
D
Power Dissipation (Note 1a) T = 25°C  
2.3  
A
T , T  
Operating and Storage Junction  
Temperature Range  
55 to + 150  
°C  
PChannel MOSFET  
J
STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 5 of  
this data sheet.  
THERMAL CHARACTERISTICS  
Symbol  
RqJC  
Parameter  
Rating  
3.1  
Unit  
Thermal Resistance, Junction to Case  
°C/W  
RqJA  
Thermal Resistance,  
Junction to Ambient (Note 1a)  
53  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
April, 2023 Rev. 4  
FDMC86520L/D  

与FDMC86520L相关器件

型号 品牌 获取价格 描述 数据表
FDMC86570L FAIRCHILD

获取价格

N-Channel Shielded Gate PowerTrench MOSFET 60 V, 56 A, 4.3 m
FDMC86570L ONSEMI

获取价格

N 沟道屏蔽门极 PowerTrench® MOSFET 60 V,84A,4.3mΩ
FDMC86570LET60 ONSEMI

获取价格

N 沟道 Shielded Gate PowerTrench® MOSFET
FDMC8676 FAIRCHILD

获取价格

N-Channel PowerTrench MOSFET
FDMC8676_07 FAIRCHILD

获取价格

N-Channel PowerTrench MOSFET
FDMC8678S FAIRCHILD

获取价格

N-Channel Power Trench㈢ SyncFET TM 30V, 18A,
FDMC8854 FAIRCHILD

获取价格

N-Channel Power Trench MOSFET 30V, 15A, 5.7mohm
FDMC8854 ONSEMI

获取价格

N 沟道,Power Trench® MOSFET,30V,15A,5.7mΩ
FDMC8854-SN00137 FAIRCHILD

获取价格

Transistor
FDMC8878 ONSEMI

获取价格

N 沟道,PowerTrench® MOSFET,30V,16.5A,14mΩ