Datasheet > FDMC86570L

FDMC86570L

更新时间： 2024-09-14 12:46:19

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		栅极
页数	文件大小	规格书
7页	352K
描述
N-Channel Shielded Gate PowerTrench MOSFET 60 V, 56 A, 4.3 m

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FDMC86570L 数据手册

May 2013

FDMC86570L

N-Channel Shielded Gate PowerTrench^®MOSFET

60 V, 56 A, 4.3 mΩ

Features

Shielded Gate MOSFET Technology

General Description

Max r_DS(on)= 4.3 mΩ at V_GS= 10 V, I_D= 18 A

Max r_DS(on)= 6.5 mΩ at V_GS= 4.5 V, I_D= 15 A

High performance technology for extremely low r_DS(on)

Termination is Lead-free

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s

incorporates Shielded Gate technology. This process has been

optimized for the on-state resistance and yet maintain superior

switching performance.

advanced PowerTrench^®process that

Application

RoHS Compliant

DC-DC Conversion

Pin 1

Top

Bottom

Power 33

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

±20

Drain Current

-Continuous

T_C= 25 °C

T_A= 25 °C

I_D

-Continuous

-Pulsed

(Note 1a)

(Note 4)

(Note 3)

200

E_AS

Single Pulse Avalanche Energy

Power Dissipation

253

T_C= 25 °C

T_A= 25 °C

P_D

Power Dissipation

(Note 1a)

2.3

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

(Note 1)

2.3

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13 ’’

Tape Width

12 mm

Quantity

FDMC86570L

Power33

3000 units

FDMC86570L Rev. C

www.fairchildsemi.com

12 3 4 5 6 7

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