Datasheet > FDMC86260ET150

FDMC86260ET150

更新时间： 2024-02-09 12:56:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	642K
描述
150 V N 沟道 Power Trench® MOSFET

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数据手册

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FDMC86260ET150 数据手册

DATA SHEET

www.onsemi.cn

MOSFET – N ꢀꢀ,

POWERTRENCH⁾

MAX

I MAX

DS(ON)

150 V

34 mW @ 10 V

44 mW @ 6 V

25 A

150 V, 25 A, 34 mW

ჵ௪ 1

FDMC86260ET150

ꢁꢁ

ჵ௪ 1

ꢀꢁNꢁꢂᬣꢁMOSFETꢁᲗꢃꢄꢅꢆꢁ(onsemi) ᪫ꢇꢁPOWERTRENCH

ꢈꢉꢊꢋ, ꢌꢍꢎ᪫ꢈꢉꢏꢐꢑꢒꢓ℠ꢔꢕℝꢖ᫪ꢗꢘℋꢙꢚꢛ

ꢜꢝꢞꢟꢠꢡꢢꢣꢤꢇ。

ၵ

⍆

WDFN8 3.3 y 3.3, 0.65P

(Power 33)

ꢂꢃ

CASE 483AW

•ꢥT ⍭ꢣȜᑉี: 175°C

•ꢥꢒꢓR

= 34 mW at V = 10 V, I = 5.4 A

GS D

DS(on)

= 44 mW at V = 6 V, I = 4.8 A

DS(on)

•ꢥ▨ꢠꢡꢂᬣᑠᤏ

ൾ▐ᥡꢖꢇR

•ꢥ100% ট᪗ UIL ꢦꢧ

•ꢥꢨꢩꢑꢪᾕꢋꢫ

DS(on)

•ꢥꢬꢭ RoHS ꢮꢯ

ꢄꢂ

N-CHANNEL MOSFET

MARKING DIAGRAM

•ꢥDC−DC ꢰꢱ

MOSFET ꢅꢆꢃꢇꢈ(T = 25°C unless otherwise noted)

ꢄꢉ

ꢊꢋ

ꢃꢇꢈ

150

ꢌꢍ

ZXYYKK

FDMC

86260ET

ꢀꢁ－⁰ꢁꢂꢀ

᧥ꢁ－⁰ꢁꢂꢀ

ꢀꢁꢂἡ

ꢁ᪮ঽ, T = 25°C (Ỉ 5)

5.4

116

ꢁ᪮ঽ, T = 100°C (Ỉ 5)

ꢁ᪮ঽ, T = 25°C (Ỉꢂ1a)

XYY

= Assembly Plant Code

= 3−Digit Date Code Format

= 2−Alphanumeric Lot Run

Traceability Code

ꢁ௙ꢃ (Ỉ 4)

ꢄ௙ꢃ↺༉்Ჟ (Ỉ 3)

ꢅ૧

121

FDMC86260ET = Specific Device Code

ꢁT = 25°C

2.8

ꢁT = 25°C (Ỉ 1a)

ORDERING INFORMATION

T , T

࿅ꢆꢇസꢈণꢃීꢉ

−55 to

+175

°C

STG

†

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

(ꢊ૓ᚡᝧ)

Device

Package

Shipping

FDMC86260ET150

PQFN8

(Pb−Free,

Halide Free)

3000 /

Tape & Reel

ୢ᥼ꢂꢀᡕ᪗ᣠଇ⍭ൺꢋጸꢌꢍꢎŔꢋීꢉ，ꢏꢐꢑ்ꢒᔿꢓ。ୢ᥼ᡕ᪗Ûĵ

᪩{℠ꢋ，෦ៀẵƽᚑꢏꢐꢅ்，ꢑ்ꢒොೄꢏꢐᔿꢓ，ᅑ

ꢑ∰ሇ。

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

ꢎꢃꢅ

ꢄꢉ

ꢊꢋ

ণೃ૶ꢄ⋍ℋꢂ(Ỉ 1)

ণೃ▏੣⋍ℋꢂ(Ỉ 1a)

ꢃꢇꢈ

2.3

ꢌꢍ

°C/W

Publication Order Number:

FDMC86260ET150CN/D

March, 2023 − Rev. 3

12 3 4 5 6 7 8

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