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FDMC8327L PDF预览

FDMC8327L

更新时间： 2024-11-19 11:13:11
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
9页 391K
描述
N 沟道，Power Trench® MOSFET，40V，14A，9.7mΩ

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中文翻译

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FDMC8327L 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, S-PDSO-N5Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：8 weeks风险等级：0.96
雪崩能效等级（Eas）：25 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：40 V
最大漏极电流 (Abs) (ID)：14 A最大漏极电流 (ID)：12 A
最大漏源导通电阻：0.0097 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：MO-240BAJESD-30 代码：S-PDSO-N5
JESD-609代码：e4湿度敏感等级：1
元件数量：1端子数量：5
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：SQUARE封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：30 W最大脉冲漏极电流 (IDM)：60 A
子类别：FET General Purpose Power表面贴装：YES
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：NO LEAD
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FDMC8327L 数据手册

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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers  
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 		N 沟道屏蔽门极 Power Trench® MOSFET 40V，141A，2.1mΩ
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 		N-Channel Power Trench㈢ MOSFET 40V, 20A, 5.8
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 		N 沟道 Power Trench® MOSFET 40V，20A，5.8mΩ
FDMC8554 FAIRCHILD

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 		N-Channel Power Trench MOSFET 20V, 16.5A, 5mohm
FDMC8554 ONSEMI

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 		N 沟道，Power Trench® MOSFET，20V，16.5A，5mΩ
FDMC8588 FAIRCHILD

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 		N-Channel PowerTrench® MOSFET 25 V, 40 A, 5.
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 		N 沟道，PowerTrench® MOSFET，25V，40A，5.7mΩ
FDMC8588DC FAIRCHILD

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 		N-Channel PowerTrench® MOSFET 25 V, 40 A, 5.

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